HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga <sub>2</sub> O <sub>3</sub> | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga ₂ O ₃

OSHIMA, Takayoshi, OSHIMA, Yuichi.

Science and Technology of Advanced Materials 27 [1] 2680969. 2026.

https://doi.org/10.1080/14686996.2026.2680969

Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga <sub>2</sub> O <sub>3</sub>

作成時刻: 2026-07-17 03:05:47 +0900 更新時刻: 2026-09-20 04:32:15 +0900

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