Rutile-type Ge<sub> x </sub>Sn<sub>1−x </sub>O<sub>2</sub> alloy layers lattice-matched to TiO<sub>2</sub> substrates for device applications | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Rutile-type Ge x Sn1−x O2 alloy layers lattice-matched to TiO2 substrates for device applications

Hitoshi Takane, Takayoshi Oshima, Takayuki Harada, Kentaro Kaneko, Katsuhisa Tanaka.

Applied Physics Express 17 [1] 011008. 2024.

https://doi.org/10.35848/1882-0786/ad15f3

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Rutile-type GexSn1−xO2 alloy layers lattice-matched to TiO2 substrates for device applications

作成時刻: 2024-01-09 03:10:57 +0900更新時刻: 2024-04-28 03:10:47 +0900

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