HOME > 論文 > 書誌詳細Carrier concentration induced band-gap shift in Al-doped Zn1−xMgxO thin filmsJ. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima. Applied Physics Letters 89 [26] . 2006.https://doi.org/10.1063/1.2424308 NIMS著者大島 孝仁Materials Data Repository (MDR)上の本文・データセット作成時刻: 2023-12-15 14:35:31 +0900 更新時刻: 2026-09-29 09:45:07 +0900
