HOME > Article > DetailCarrier concentration induced band-gap shift in Al-doped Zn1−xMgxO thin filmsJ. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima. Applied Physics Letters 89 [26] . 2006.https://doi.org/10.1063/1.2424308 NIMS author(s)OSHIMA, TakayoshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2023-12-15 14:35:31 +0900 Updated at: 2026-10-30 09:48:54 +0900