Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches

Takayoshi Oshima, Yuichi Oshima.

Applied Physics Letters 124 [4] 042110. 2024.

https://doi.org/10.1063/5.0186319

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2024-01-27 03:10:07 +0900更新時刻: 2024-09-12 09:21:51 +0900

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