Halide vapor phase epitaxy of a thick <i>c</i> -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template

Yuichi Oshima, Takayoshi Oshima, Shiyu Xiao, Kazuto Murakami, Katsuhiro Imai, Takahiro Tomita.

Journal of Applied Physics 139 [7] 075302. 2026.

https://doi.org/10.1063/5.0319104

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Halide vapor phase epitaxy of a thick <i>c</i> -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template

作成時刻: 2026-02-19 03:07:58 +0900 更新時刻: 2026-09-26 04:36:15 +0900

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