Wet etching of (−102) β-Ga <sub>2</sub> O <sub>3</sub> with tetramethylammonium hydroxide (TMAH) | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Wet etching of (−102) β-Ga ₂ O ₃ with tetramethylammonium hydroxide (TMAH)

Takayoshi Oshima.

Science and Technology of Advanced Materials 27 [1] 2666988. 2026.

https://doi.org/10.1080/14686996.2026.2666988

Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR)

NIMS著者

大島孝仁

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Wet etching of (−102) β-Ga <sub>2</sub> O <sub>3</sub> with tetramethylammonium hydroxide (TMAH)

作成時刻: 2026-06-12 03:07:28 +0900 更新時刻: 2026-07-13 04:32:58 +0900

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