HOME > Article > DetailWet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)Takayoshi Oshima. Science and Technology of Advanced Materials 27 [1] 2666988. 2026.https://doi.org/10.1080/14686996.2026.2666988 Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR) NIMS author(s)OSHIMA, TakayoshiFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Wet etching of (−102) β-Ga <sub>2</sub> O <sub>3</sub> with tetramethylammonium hydroxide (TMAH) Created at: 2026-06-12 03:07:28 +0900 Updated at: 2026-08-14 04:33:12 +0900