HOME > Article > DetailEffect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga2O3Yuichi Oshima, Takayoshi Oshima. Japanese Journal of Applied Physics 62 [8] 080901. 2023.https://doi.org/10.35848/1347-4065/acee3b Open Access IOP Publishing (Publisher) Materials Data Repository (MDR) NIMS author(s)OSHIMA, YuichiOSHIMA, TakayoshiFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Effect of temperature and HCl partial pressure on the selective area gas etching of (001) β-Ga2O3 Created at: 2023-08-25 03:31:13 +0900 Updated at: 2026-10-08 08:48:40 +0900
