Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga<sub>2</sub>O<sub>3</sub> | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Effect of the temperature and HCl partial pressure on selective-area gas etching of (001) β-Ga₂O₃

Yuichi Oshima, Takayoshi Oshima.

Japanese Journal of Applied Physics 62 [8] 080901. 2023.

https://doi.org/10.35848/1347-4065/acee3b

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Effect of temperature and HCl partial pressure on the selective area gas etching of (001) β-Ga2O3

作成時刻: 2023-08-25 03:31:13 +0900更新時刻: 2024-08-10 10:20:36 +0900

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