Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on $(\bar{2}01)$ β-Ga2O3

Makoto Kasu; Takayoshi Oshima; Kenji Hanada; Tomoya Moribayashi; Akihiro Hashiguchi; Toshiyuki Oishi; Kimiyoshi Koshi; Kohei Sasaki; Akito Kuramata; Osamu Ueda; Makoto Kasu; Takayoshi Oshima; Kenji Hanada; Tomoya Moribayashi; Akihiro Hashiguchi; Toshiyuki Oishi; Kimiyoshi Koshi; Kohei Sasaki; Akito Kuramata; Osamu Ueda

doi:10.7567/jjap.56.091101

Crystal defects observed by the etch-pit method and their effects on Schottky-barrier-diode characteristics on $(\bar{2}01)$ β-Ga2O3

Makoto Kasu, Takayoshi Oshima, Kenji Hanada, Tomoya Moribayashi, Akihiro Hashiguchi, Toshiyuki Oishi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda.

Japanese Journal of Applied Physics 56 [9] 091101. 2017.

https://doi.org/10.7567/jjap.56.091101

NIMS author(s)

OSHIMA, Takayoshi

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-11-12 11:25:05 +0900 Updated at: 2026-11-08 05:22:40 +0900