HCl-gas etching behavior of (001) β-Ga <sub>2</sub> O <sub>3</sub> under oxygen supply | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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HCl-gas etching behavior of (001) β-Ga ₂ O ₃ under oxygen supply

Yuichi Oshima, Takayoshi Oshima.

Science and Technology of Advanced Materials 26 [1] 2546285. 2025.

https://doi.org/10.1080/14686996.2025.2546285

Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable HCl-gas etching of (001) β-Ga2O3 under oxygen supply

作成時刻: 2025-09-05 03:12:06 +0900 更新時刻: 2026-10-18 04:30:39 +0900

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