Plasma-free anisotropic selective-area etching of β-Ga <sub>2</sub> O <sub>3</sub> using forming gas under atmospheric pressure | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Plasma-free anisotropic selective-area etching of β-Ga ₂ O ₃ using forming gas under atmospheric pressure

Takayoshi Oshima, Rie Togashi, Yuichi Oshima.

Science and Technology of Advanced Materials 25 [1] 2378683. 2024.

https://doi.org/10.1080/14686996.2024.2378683

Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Plasma-free anisotropic selective-area etching of β-Ga <sub>2</sub> O <sub>3</sub> using forming gas under atmospheric pressure

作成時刻: 2024-08-01 03:12:49 +0900更新時刻: 2025-01-06 04:29:38 +0900

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