Plasma-free anisotropic selective-area etching of β-Ga <sub>2</sub> O <sub>3</sub> using forming gas under atmospheric pressure | SAMURAI, NIMS Researchers Directory Service

HOME > Article > Detail

Plasma-free anisotropic selective-area etching of β-Ga ₂ O ₃ using forming gas under atmospheric pressure

Takayoshi Oshima, Rie Togashi, Yuichi Oshima.

Science and Technology of Advanced Materials 25 [1] 2378683. 2024.

https://doi.org/10.1080/14686996.2024.2378683

Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Plasma-free anisotropic selective-area etching of β-Ga <sub>2</sub> O <sub>3</sub> using forming gas under atmospheric pressure

Created at: 2024-08-01 03:12:49 +0900 Updated at: 2026-09-26 04:33:21 +0900

▲ Go to the top of this page