Rapid homoepitaxial growth of (011) β-Ga <sub>2</sub> O <sub>3</sub> by HCl-based halide vapor phase epitaxy | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Rapid homoepitaxial growth of (011) β-Ga ₂ O ₃ by HCl-based halide vapor phase epitaxy

Yuichi Oshima, Takayoshi Oshima.

Science and Technology of Advanced Materials 26 [1] 2585551. 2025.

https://doi.org/10.1080/14686996.2025.2585551

Open Access Informa UK Limited (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Rapid homoepitaxial growth of (011) β-Ga <sub>2</sub> O <sub>3</sub> by HCl-based halide vapor phase epitaxy

作成時刻: 2025-11-28 03:08:41 +0900 更新時刻: 2026-10-08 09:14:45 +0900

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