Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface

Takayoshi Oshima, Yuji Kato, Eisuke Magome, Eiichi Kobayashi, Kazutoshi Takahashi.

Japanese Journal of Applied Physics 58 [6] 060910. 2019.

https://doi.org/10.7567/1347-4065/ab219f

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大島孝仁

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-11-12 11:24:58 +0900更新時刻: 2024-04-02 02:22:00 +0900

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