Selective-area-grown high-aspect-ratio β-Ga2O3 structures fabricated by HCl-based halide vapor phase epitaxy
The 4th International Workshop on Gallium Oxide and Related Materials. 2022.
NIMS著者
Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2022-11-02 03:25:18 +0900更新時刻: 2022-11-02 03:25:18 +0900