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Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3substrates with crystal defects

Takayoshi Oshima, Akihiro Hashiguchi, Tomoya Moribayashi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda, Toshiyuki Oishi, Makoto Kasu.
Japanese Journal of Applied Physics 56 [8] 086501. 2017.
https://doi.org/10.7567/jjap.56.086501

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