HOME > 論文 > 書誌詳細Electrical properties of Schottky barrier diodes fabricated on (001) β-Ga2O3substrates with crystal defectsTakayoshi Oshima, Akihiro Hashiguchi, Tomoya Moribayashi, Kimiyoshi Koshi, Kohei Sasaki, Akito Kuramata, Osamu Ueda, Toshiyuki Oishi, Makoto Kasu. Japanese Journal of Applied Physics 56 [8] 086501. 2017.https://doi.org/10.7567/jjap.56.086501 NIMS著者大島 孝仁Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-11-12 11:25:07 +0900 更新時刻: 2026-11-09 04:23:34 +0900
