HOME > プロフィール > 陳 君
出版物原則として、2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Jun Chen, Hiroyuki Sazawa, Wei Yi, Takashi Sekiguchi. Cathodoluminescence Study of 3C-SiC Epilayers Grown on 4H-SiC Substrates. Journal of Electronic Materials. 52 [8] (2023) 5075-5083 10.1007/s11664-023-10336-7
- Can He, Takashi Takeda, Zhaohui Huang, Jian Xu, Jun Chen, Wei Yi, Rongjun Xie, Naoto Hirosaki. Powder synthesis and luminescence of a novel yellow-emitting Ba5Si11Al7N25: Eu2+ phosphor discovered by a single-particle-diagnosis approach for warm w-LEDs. Chemical Engineering Journal. 455 (2023) 140932 10.1016/j.cej.2022.140932
- Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, Yoshiyuki Yamashita. Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN. ACS Applied Electronic Materials. 4 [9] (2022) 4719-4723 10.1021/acsaelm.2c00912
会議録
- Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada. Statistical consideration of grain growth mechanism of multicrystalline Si by one directional solidification technique. SOLID STATE PHENOMENA. (2015) 35-40 10.4028/www.scientific.net/ssp.242.35
- Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto. 50 cm size Seed Cast Si ingot growth and its characterization. SOLID STATE PHENOMENA. (2015) 30-34 10.4028/www.scientific.net/ssp.242.30
- Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto. Control of extended defects in cast and seed cast Si ingots for photovoltaic application. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. (2015) 1094-1098 10.1002/pssc.201400230
口頭発表
- CHEN, Jun, Hiroyuki Sazawa, Wei YI, Takashi SEKIGUCHI. Cathodoluminescence study of 3C-SiC layer grown on 4H-SiC substrate . DRIP XIX (19th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors). 2022
- 長谷川 浩太, 清水 荘雄, 陳 君, 大澤 健男, 坂口 勲, 大橋 直樹. Nb:SrTiO3基板上のエピタキシャル(Al,Sc)N薄膜における強誘電体特性. 2022年第69回応用物理学会春季学術講演会. 2022
- 森田 雅也, 石橋啓次, 高橋健一郎, 上田 茂典, 陳 君, 知京 豊裕, 小椋厚志, 長田 貴弘. Si (100)上無極性AlN成長時のN₂スパッタリングガス供給量の条件検討. 電子デバイス界面テクノロジー研究会－材料・プロセス・デバイス特性の物理－(第26回研究会). 2021
その他の文献
- CHEN, Jun, PRAKASH, Ronit Roneel, LI, Jian-Yong, JIPTNER, Karolin, MIYAMURA, Yoshiji, HARADA, Hirofumi, SEKIGUCHI, Takashi. An investigation of the impact of crystal orientation on dislocation distribution in multicrystalline silicon. Proceedings of 7th International Workshop on Crystalline Silicon Solar Cells . (2013) 138-141
- Yoshiji Miyamura, Hirofumi Harada, Shun Ito, Jun Chen, Takashi Sekiguchi. Structural study of small angle grain boundaries in multicrystalline Si. Materials Science Forum. 725 (2012) 157-160 10.4028/www.scientific.net/msf.725.157
- SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Motoyuki Sato, Ryu Hasunuma, Kikuo Yamabe, Yasuo Nar. Electron-beam-induced current study of breakdown behavior of high-k gate MOSFETs. SOLID STATE PHENOMENA. (2010) 461-466 10.4028/www.scientific.net/156-158.461
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