SAMURAI - NIMS Researchers Database

HOME > プロフィール > 陳 君

Address
305-0044 茨城県つくば市並木1-1 [アクセス]
  • 論文・発表

[論文] | [書籍] | [会議録] | [口頭発表] | [その他の文献] | [特許]

論文 TSV

2020
  1. Wei Yi, Jun Chen, Takashi Sekiguchi. Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3. Crystals. 10 [9] (2020) 736 10.3390/cryst10090736
  2. A. Ogura, W. Yi, J. Chen, H. Suzuki, M. Imaizumi. Cathodoluminescence Study of Dislocations in Step-Graded InGaP Buffer Layers of Metamorphic Single-Junction InGaAs Solar Cells. Journal of Electronic Materials. 49 [9] (2020) 5219-5225 10.1007/s11664-020-08259-8
  3. Jun Chen, Wei Yi, Ashutosh Kumar, Akio Iwanade, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Shun Ito, Takashi Kimura, Tadakatsu Ohkubo, Takashi Sekiguchi. Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes. Journal of Electronic Materials. 49 [9] (2020) 5196-5204 10.1007/s11664-020-08081-2
  4. Ashutosh Kumar, Wei Yi, Jun Uzuhashi, Tadakatsu Ohkubo, Jun Chen, Takashi Sekiguchi, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kazuhiro Hono. Influence of implanted Mg concentration on defects and Mg distribution in GaN. Journal of Applied Physics. 128 [6] (2020) 065701 10.1063/5.0014717
  5. Wei Yi, Ashutosh Kumar, Jun Uzuhashi, Takashi Kimura, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Yongzhao Yao, Yukari Ishikawa, Jun Chen, Tadakatsu Ohkubo, Takashi Sekiguchi, Kazuhiro Hono. Mg diffusion and activation along threading dislocations in GaN. Applied Physics Letters. 116 [24] (2020) 242103 10.1063/5.0009596
  6. Takahiro Nagata, Tomohiro Yamaguchi, Shigenori Ueda, Wei Yi, Jun Chen, Takuya Kobayashi, Hirokazu Yokoo, Tohru Honda, Yoshiyuki Yamashita, Toyohiro Chikyow. Photoelectron spectroscopic study on electronic state of corundum In2O3 epitaxial thin film grown by mist-CVD. Japanese Journal of Applied Physics. 59 [SI] (2020) SIIG12 10.35848/1347-4065/ab84b2
2016
  1. Shengping Wang, Shuang Xie, Guowei Huang, Hongxuan Guo, Yujin Cho, Jun Chen, Daisuke Fujita, Mingsheng Xu. Grassy Silica Nanoribbons and Strong Blue Luminescence. Scientific Reports. 6 [1] (2016) 10.1038/srep34231
  2. Jun Chen, Takashi Sekiguchi, Jianyong Li, Shun Ito. Investigation of dislocations in Nb-doped (100) SrTiO3 single crystals and their impacts on resistive switching. Superlattices and Microstructures. 99 (2016) 182-185 10.1016/j.spmi.2016.03.013
  3. Xianjia Luo, Ronit R. Prakash, Jun Chen, Karolin Jiptner, Takashi Sekiguchi. Effect of Σ3 generation on random grain boundaries in multicrystalline silicon. Superlattices and Microstructures. 99 (2016) 136-139 10.1016/j.spmi.2016.03.032
  4. SEKIGUCHI, Takashi, CHEN, Jun. Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniques. Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering. 946 (2016) 343-373
2015
  1. Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada. Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique. Solid State Phenomena. 242 (2015) 35-40 10.4028/www.scientific.net/ssp.242.35
  2. Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto. 50 cm Size Seed Cast Si Ingot Growth and its Characterization. Solid State Phenomena. 242 (2015) 30-34 10.4028/www.scientific.net/ssp.242.30
  3. Ronit R. Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi. Control of extended defects in cast multicrystalline silicon using polycrystalline template. physica status solidi (c). 12 [8] (2015) 1099-1102 10.1002/pssc.201400299
  4. Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto. Control of extended defects in cast and seed cast Si ingots for photovoltaic application. physica status solidi (c). 12 [8] (2015) 1094-1098 10.1002/pssc.201400230
  5. Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto, SEKIGUCHI, Takashi, JIPTNER, Karolin, PRAKASH, Ronit Roneel, CHEN, Jun, MIYAMURA, Yoshiji, HARADA, Hirofumi, Satoshi Nakano, Bin Gao, Koichi Kakimoto. Control of extended defects in cast and seed cast Si ingots for photovoltaic application. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 12 [8] (2015) 1094-1098
  6. Jun Chen, Takashi Sekiguchi, Jianyong Li, Shun Ito, Wei Yi, Atsushi Ogura. Investigation of dislocations in Nb-doped SrTiO3 by electron-beam-induced current and transmission electron microscopy. Applied Physics Letters. 106 [10] (2015) 102109 10.1063/1.4915298
  7. Ronit R. Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi. Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds. Applied Physics Express. 8 [3] (2015) 035502 10.7567/apex.8.035502
2014
  1. Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, S. Nakano, B. Gao, K. Kakimoto, T. Sekiguchi. Crystal growth of 50cm square mono-like Si by directional solidification and its characterization. Journal of Crystal Growth. 401 (2014) 133-136 10.1016/j.jcrysgro.2014.03.016
  2. Ronit R. Prakash, Takashi Sekiguchi, Karolin Jiptner, Yoshiji Miyamura, Jun Chen, Hirofumi Harada, Koichi Kakimoto. Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal. Journal of Crystal Growth. 401 (2014) 717-719 10.1016/j.jcrysgro.2014.01.067
  3. Bin Chen, Jun Chen, Yuanzhao Yao, Takashi Sekiguchi, Hirofumi Matsuhata, Hajime Okumura. In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC. Applied Physics Letters. 105 [4] (2014) 042104 10.1063/1.4891834
  4. Kentaro Watanabe, Takeshi Nokuo, Jun Chen, Takashi Sekiguchi. Local electrical properties of n-AlInAs/i-GaInAs electron channel structures characterized by theprobe-electron-beam-induced current technique. Microscopy. 63 [2] (2014) 161-166 10.1093/jmicro/dft050
  5. Y. Miyamura, J. Chen, R.R. Prakash, K. Jiptner, H. Harada, T. Sekiguchi. Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots. Acta Physica Polonica A. 125 [4] (2014) 1024-1026 10.12693/aphyspola.125.1024
  6. Y. Miyamura, T. Sekiguchi, J. Chen, J.Y. Li, K. Watanabe, K. Kumagai, A. Ogura. Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application. Acta Physica Polonica A. 125 [4] (2014) 991-993 10.12693/aphyspola.125.991
2013
  1. Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Jian Yong Li, Takashi Sekiguchi, Takuto Kojima, Yoshio Ohshita, Atsushi Ogura, Masayuki Fukuzawa, Satoshi Nakano, Bing Gao, Koichi Kakimoto. 10 cm Diameter Mono Cast Si Growth and its Characterization. Solid State Phenomena. 205-206 (2013) 89-93 10.4028/www.scientific.net/ssp.205-206.89
  2. Jianyong Li, Ronit Roneel Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Atsushi Ogura, Takashi Sekiguchi. Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells. Journal of Crystal Growth. 377 (2013) 37-42 10.1016/j.jcrysgro.2013.03.051
2012
  1. Takayoshi Shimura, Takuya Matsumiya, Naoki Morimoto, Takuji Hosoi, Kentaro Kajiwara, Jun Chen, Takashi Sekiguchi, Heiji Watanabe. Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction. Materials Science Forum. 725 (2012) 153-156 10.4028/www.scientific.net/msf.725.153
  2. Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si. Materials Science Forum. 725 (2012) 123-128 10.4028/www.scientific.net/msf.725.123
2011
  1. Keiichi Akutsu, Hideki Kawakami, Mitsushi Suzuno, Takashi Yaguchi, Karolin Jiptner, Jun Chen, Takashi Sekiguchi, Teruhisa Ootsuka, Takashi Suemasu. Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy. Journal of Applied Physics. 109 [12] (2011) 123502 10.1063/1.3596565
  2. Kazuhiro Kumagai, Yuanzhao Yao, Jun Chen, Takashi Sekiguchi. Image instability during the electrical measurement in scanning electron microscope. physica status solidi (c). 8 [4] (2011) 1407-1411 10.1002/pssc.201000003
  3. Hideki Kawakami, Mitsushi Suzuno, Keiichi Akutsu, Jun Chen, Karolin Jiptner, Takashi Sekiguchi, Takashi Suemasu. Effect of Introducing β-FeSi2Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-β-FeSi2/n-Si Heterointerface. Japanese Journal of Applied Physics. 50 [4R] (2011) 041303 10.1143/jjap.50.041303
  4. Naoki Fukata, Shinya Ishida, Shigeki Yokono, Ryo Takiguchi, Jun Chen, Takashi Sekiguchi, Kouichi Murakami. Segregation Behaviors and Radial Distribution of Dopant Atoms in Silicon Nanowires. Nano Letters. 11 [2] (2011) 651-656 10.1021/nl103773e
2010
  1. Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura. Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices. Journal of Electronic Materials. 39 [6] (2010) 684-687 10.1007/s11664-010-1168-6
  2. Masayuki Fukuzawa, Masayoshi Yamada, Md. Rafiqul Islam, Jun Chen, Takashi Sekiguchi. Quantitative Photoelastic Characterization of Residual Strains in Grains of Multicrystalline Silicon. Journal of Electronic Materials. 39 [6] (2010) 700-703 10.1007/s11664-010-1164-x
2008
  1. N. Fukata, M. Mitome, Y. Bando, M. Seoka, S. Matsushita, K. Murakami, J. Chen, T. Sekiguchi. Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation. Applied Physics Letters. 93 [20] (2008) 203106 10.1063/1.3033226
  2. Jun Chen, Bin Chen, Takashi Sekiguchi, Masayuki Fukuzawa, Masayoki Yamada. Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon. Applied Physics Letters. 93 [11] (2008) 112105 10.1063/1.2983649
  3. Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, Filippo Fabbri. Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode. Applied Physics Letters. 93 [3] (2008) 033514 10.1063/1.2960339
  4. J. Chen, X. Yuan, T. Sekiguchi. Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique. Scanning. 30 [4] (2008) 347-353 10.1002/sca.20116
  5. Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current. Applied Physics Letters. 92 [26] (2008) 262103 10.1063/1.2952829
  6. Teruhisa Ootsuka, Takashi Suemasu, Jun Chen, Takashi Sekiguchi, Yoshiaki Hara. Lifetime and diffusion length of photogenerated minority carriers in single-crystalline n-type β-FeSi2 bulk. Applied Physics Letters. 92 [19] (2008) 192114 10.1063/1.2929744
  7. Teruhisa Ootsuka, Takashi Suemasu, Jun Chen, Takashi Sekiguchi. Evaluation of minority-carrier diffusion length in n-type β-FeSi2 single crystals by electron-beam-induced current. Applied Physics Letters. 92 [4] (2008) 042117 10.1063/1.2835904
2007
  1. Jun Chen, Takashi Sekiguchi. Carrier Recombination Activity and Structural Properties of Small-Angle Grain Boundaries in Multicrystalline Silicon. Japanese Journal of Applied Physics. 46 [10A] (2007) 6489-6497 10.1143/jjap.46.6489
  2. SEKIGUCHI, Takashi, CHEN, Jun, Yuan, Xiaoli. 電子線誘起電流法(EBIC)を使ったシリコン系機能材料の特性評価. 顕微鏡. 42 [2] (2007) 84-88
  3. Xingbo Liang, Lei Wang, Xiangyang Ma, Dongsheng Li, Peihong Cheng, Deren Yang, Jun Chen, Takashi Sekiguchi. Enhanced red electroluminescence from a polycrystalline diamond film/Si heterojunction structure. Applied Physics Letters. 90 [16] (2007) 161123 10.1063/1.2730584
  4. N. Fukata, J. Chen, T. Sekiguchi, S. Matsushita, T. Oshima, N. Uchida, K. Murakami, T. Tsurui, S. Ito. Phosphorus doping and hydrogen passivation of donors and defects in silicon nanowires synthesized by laser ablation. Applied Physics Letters. 90 [15] (2007) 153117 10.1063/1.2721377
2004
  1. J. Chen, T. Sekiguchi, D. Yang, F. Yin, K. Kido, S. Tsurekawa. Electron-beam-induced current study of grain boundaries in multicrystalline silicon. Journal of Applied Physics. 96 [10] (2004) 5490-5495 10.1063/1.1797548
  2. S. Nara, T. Sekiguchi, J. Chen. High quality multicrystalline silicon grown by multi-stage solidification control method. The European Physical Journal Applied Physics. 27 [1-3] (2004) 389-392 10.1051/epjap:2004063
  3. J Chen, T Sekiguchi, S Nara, D Yang. The characterization of high quality multicrystalline silicon by the electron beam induced current method. Journal of Physics: Condensed Matter. 16 [2] (2004) S211-S216 10.1088/0953-8984/16/2/025

書籍 TSV

2016
  1. SEKIGUCHI, Takashi, CHEN, Jun. Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniques. Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering. , 2016, 343-373.

会議録 TSV

2015
  1. Takashi Sekiguchi, Ronit R. Prakash, Karolin Jiptner, Xian Jia Luo, Jun Chen, Yoshiji Miyamura, Hirofumi Harada. Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique. SOLID STATE PHENOMENA. 2015, 35-40
  2. Takashi Sekiguchi, Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Satoshi Nakano, Bing Gao, Koichi Kakimoto. 50 cm Size Seed Cast Si Ingot Growth and its Characterization. SOLID STATE PHENOMENA. 2015, 30-34
  3. Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto. Control of extended defects in cast and seed cast Si ingots for photovoltaic application. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 2015, 1094-1098
2014
  1. CHEN, Jun, PRAKASH, Ronit Roneel, LI, Jian-Yong, JIPTNER, Karolin, MIYAMURA, Yoshiji, HARADA, Hirofumi, Atsushi Ogura, SEKIGUCHI, Takashi. Understanding of inhomogeneous dislocation distribution in multicrystalline silicon. SOLID STATE PHENOMENA. 2014, 77-82
2013
  1. CHEN, Jun, PRAKASH, Ronit Roneel, LI, Jian-Yong, JIPTNER, Karolin, MIYAMURA, Yoshiji, HARADA, Hirofumi, SEKIGUCHI, Takashi. An investigation of the impact of crystal orientation on dislocation distribution in multicrystalline silicon. Proceedings of 7th International Workshop on Crystalline Silicon Solar Cells . 2013, 138-141
  2. Yoshiji Miyamura, Hirofumi Harada, Karolin Jiptner, Jun Chen, Ronit R. Prakash, Jian Yong Li, Takashi Sekiguchi, Takuto Kojima, Yoshio Ohshita, Atsushi Ogura, Masayuki Fukuzawa, Satoshi Nakano, Bing Gao, Koichi Kakimoto. 10 cm Diameter Mono Cast Si Growth and its Characterization. SOLID STATE PHENOMENA. 2013, 89-93
2012
  1. Takayoshi Shimura, Takuya Matsumiya, Naoki Morimoto, Takuji Hosoi, Kentaro Kajiwara, Jun Chen, Takashi Sekiguchi, Heiji Watanabe. Analysis of Lattice Distortion in Multicrystalline Silicon for Photovoltaic Cells by Synchrotron White X-Ray Microbeam Diffraction. MATERIALS SCIENCE FORUM. 2012, 153-156
  2. Electrical/Optical Activities of Grain Boundaries in Multicrystalline Si. MATERIALS SCIENCE FORUM. 2012, 123-128
  3. Yoshiji Miyamura, Hirofumi Harada, Shun Ito, Jun Chen, Takashi Sekiguchi. Structural Study of Small Angle Grain Boundaries in Multicrystalline Si. MATERIALS SCIENCE FORUM. 2012, 157-160
2011
  1. Kazuhiro Kumagai, Yuanzhao Yao, Jun Chen, Takashi Sekiguchi. Image instability during the electrical measurement in scanning electron microscope. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 2011, 1407-1411
2010
  1. CHEN, Jun, CHEN, Bin, LEE, Woong, Masayuki Fukuzawa, Masayoshi Yamada, SEKIGUCHI, Takashi. Grain Boundaries in Multicrystalline Si. SOLID STATE PHENOMENA. 2010, 19-26
  2. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, NEMOTO, Yoshihiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, CHIKYOW, Toyohiro. An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks. ECS Transcations. 2010, 299-313
  3. SEKIGUCHI, Takashi, LEE, Woong, CHEN, Jun, CHEN, Bin. D-line emission from small angle grain boundaries in multicrystalline Si. Solid state phenomena. 2010, 561-565
  4. SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Motoyuki Sato, Ryu Hasunuma, Kikuo Yamabe, Yasuo Nar. Electron-beam-induced current study of breakdown behavior of high-k gate MOSFETs. SOLID STATE PHENOMENA. 2010, 461-466
2009
  1. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. Electron Beam Induced Current Investigation of Stress-Induced Leakage and Breakdown Processes in High-k stacks. IEEE IRPS 2009 Proceedings . 2009, 333-338
  2. CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, Filippo Fabbri. Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films. SUPERLATTICES AND MICROSTRUCTURES. 2009, 295-300
  3. FUKATA, Naoki, Masanori Seoka, Naoyuki Saito, SATO, Keisuke, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Doping and segregation of impurity atoms in silicon nanowires. PHYSICA B-CONDENSED MATTER. 2009, 5200-5202
2008
  1. FUKATA, Naoki, Satoshi Matsushita, Naoya Okada, CHEN, Jun, SEKIGUCHI, Takashi, Noriyuki Uchida, Kouichi Murakami. Impurity doping in silicon nanowires synthesized by laser ablation. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING. 2008, 589-592
  2. CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Takasumi Oyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, FILIPPOFabbri. EBIC study of dislocations and stacking faults in 4H-SiC homoepitaxial films. Publication name Proc. of the 5th International Symposium on Advanced Science and Technology of Silicon Materials. 2008, 299-303
  3. SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin, LEE, Woong. Electrical and optical activities of small-angle grain boundaries in multicrystalline silicon. Publication name Proc. of the 5th International Symposium on Advanced Science and Technology of Silicon Materials. 2008, 140-143
  4. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, CHIKYOW, Toyohiro, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. CHARACTERIZATION OF LEAKAGE BEHAVIORS OF HIGH-K GATE STACKS BY ELECTRON-BEAM-INDUCED CURRENT. IEEE IRPS 2008 Proceedings. 2008, 584-588
  5. CHEN, Jun, SEKIGUCHI, Takashi, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. Electron-beam-induced current characterization of high-k dielectrics. Proc. of the 5th International Symposium on Advanced Science and Technology of Silicon Materials. 2008, 74-77
  6. CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Akimasa Kinishita, Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichirou Nagai, Hajime Okumura. Electron-Beam Induced Current Study of Electrical activity of dislocations in 4H-SiC homoepitaxial films. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS. 2008, S219-S223
2007
  1. Yuan, Xiaoli, CHEN, Jun, Ri Sungi , Ito Shun, SEKIGUCHI, Takashi. Visibility of misfit dislocations at the interface of strained Si/Si0.8Ge0.2 by EBIC. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 2007, 3030-3036
  2. SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, UMEZAWA, Naoto, OHMORI, Kenji, CHIKYOW, Toyohiro, Hasunuma Ryu, Yamabe Kikuo, Inumiya Seiji, Nara Yasuo. Observation of leakage sites in high-k gate dielectrics in MOSFET devices by electron-beam-induced current technique. Solid State Phenomena. 2007, 449-454
  3. CHEN, Jun, SEKIGUCHI, Takashi, ITO Shun, YANG Deren. Carrier recombination activities and structural properties of small-angle boundaries in multicrystalline silicon. Solid State Phenomena. 2007, 9-14
  4. FUKATA, Naoki, Naoya Okada, Satoshi Matsushita, Takao Tsurui, Shun Ito, CHEN, Jun, SEKIGUCHI, Takashi, Noriyuki Uchida, Kouichi Murakami. Carrier doping of silicon nanowires synthesized by laser Ablation. Mater. Res. Soc. Symp. Proc.. 2007, 99999-99999
  5. FUKATA, Naoki, Takashi Oshima, Naoya Okada, Satoshi Matsushita, Takao Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation. SOLID STATE PHENOMENA. 2007, 553-558
  6. CHEN, Jun, SEKIGUCHI, Takashi, Yang Deren. Electron Beam Induced Current Study of Grain Boundaries in Multicrystalline Si. PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS. 2007, 2908-2917
  7. FUKATA, Naoki, S. Matsudhits, CHEN, Jun, SEKIGUCHI, Takashi, K. Murakami. Impurity doping in silicon nanowires. The Forum on the Science and Technology of Silicon Materials 2007. 2007, 299-303
  8. FUKATA, Naoki, S. MAtsushita, T. Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, N. Uchida, K. Murakami. Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation. PHYSICA B-CONDENSED MATTER. 2007, 523-526
2004
  1. 謝栄国, SEKIGUCHI, Takashi, CHEN, Jun, 楊徳仁, 伊藤俊. Comparison of Grain Boundaries in Multicrystalline Si Ingot and Artificial Grain Boundaries in Bonded Si Wafers. Proc. of the 4th International Symposium on Advanced Science and Technology of Silicon Materials. 2004, 424-428

口頭発表 TSV

2019
  1. CHEN, Jun, YI, Wei, KIMURA, Takashi, SEKIGUCHI, Takashi. Cathodoluminescence characterization of GaN-based materials: From wafer-scale mapping to nano-scale 3D analysis. 8th International Symposium on Practical Surface Analysis (PSA19). 2019
  2. YI, Wei, CHEN, Jun, SEKIGUCHI, Takashi. Cathodoluminescence spectral mapping analysis of InGaN/GaN core-shell nanowires . 8th International Symposium on Practical Surface Analysis (PSA19). 2019
  3. NAGATA, Takahiro, Tomohiro Yamaguchi, UEDA, Shigenori, YI, Wei, CHEN, Jun, Takuya Kobayashi, Hirokazu Yokoo, YAMASHITA, Yoshiyuki, CHIKYOW, Toyohiro. Photoelectron Spectroscopic Study on Electronic State of Corundum In2O3 Epitaxial Thin Film Grown by Mist-CVD. 32nd International Microprocesses and Nanotechnology Conference. 2019
  4. YI, Wei, UZUHASHI, Jun, CHEN, Jun, KIMURA, Takashi, OHKUBO, Tadakatsu, SEKIGUCHI, Takashi, HONO, Kazuhiro, 上山智, 竹内哲也. Cathodoluminescence and Scanning Transmission Electron Microscopy study of InGaN/GaN Quantum Wells in Core-shell GaN Nanowires. DRIP XVIII. 2019
  5. CHEN, Jun, YI, Wei, KIMURA, Takashi, SEKIGUCHI, Takashi, Ryo TANAKA, Shinya TAKASHIMA, Masaharu EDO. Electron-beam-induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes . DRIP XVIII. 2019
  6. YI, Wei, CHEN, Jun, KUMAR, Ashutosh, UZUHASHI, Jun, KIMURA, Takashi, OHKUBO, Tadakatsu, SEKIGUCHI, Takashi, HONO, Kazuhiro, Shinya TAKASHIMA, Masaharu EDO. Cathodoluminescence and Atom Probe Study of Mg Implanted GaN Homoepitaxial Layer: An Evidence of Mg Pipe Diffusion along Dislocations . DRIP XVIII. 2019
  7. CHEN, Jun, YI, Wei, Seiji HIGUCHI, SEKIGUCHI, Takashi. Analysis of Macro Defects in GaN Substrate Wafer based on Imaging Cathodoluminescence Technique . DRIP XVIII. 2019
2018
  1. CHEN, Jun, YI, Wei, CHO, Yujin, KIMURA, Takashi, SEKIGUCHI, Takashi, UZUHASHI, Jun, HONO, Kazuhiro, OHKUBO, Tadakatsu, Shinya Takashima, Masaharu Edo. Atom Probe and Cathodoluminescence study of Mg implanted layers in GaN. The International Workshop on Nitride Semiconductors 2018 (IWN 2018). 2018
  2. YI, Wei, CHEN, Jun, KIMURA, Takashi, UZUHASHI, Jun, Tetsuya Takeuchi, Satoshi Kamiyama, OHKUBO, Tadakatsu, HONO, Kazuhiro, SEKIGUCHI, Takashi. Cathodoluminescence Characterization of Core-shell GaN Nanowires. The International Workshop on Nitride Semiconductors 2018 (IWN 2018). 2018
  3. CHEN, Jun, YI, Wei, KIMURA, Takashi, NABATAME, Toshihide, SEKIGUCHI, Takashi. Wafer-Scale Analysis of GaN by Imaging CL Technique. The International Workshop on Nitride Semiconductors (IWN2018). 2018
  4. CHEN, Jun. Application and prospect of electron-beam-induced current technique: from defect characterization to device diagnosis. 19th International Microscopy Congress. 2018
  5. YI, Wei, CHEN, Jun, Shun Ito, TANG, Daiming, CHO, Yujin, OSHIMA, Yuichi, SEKIGUCHI, Takashi. Cathodoluminescence study of stacking faults and dislocations in bulk GaN. 19th International Microscopy Congress. 2018
  6. CHEN, Jun, YI, Wei, Peng Wang, Shun Ito, SEKIGUCHI, Takashi. Investigation of the electrical and optical properties of dislocations in SrTiO3 by EBIC/CL. The 14th BIAMS Conference. 2018
  7. CHEN, Jun, SEKIGUCHI, Takashi. APPLICATIONS OF EBIC IN SEMICONDUCTOR RESEARCH. MPM3. 2018
  8. CHEN, Jun, YI, Wei, SEKIGUCHI, Takashi, Kozo Fujiwara . INVESTIGATION OF SILICON DENDRITES BY ELECTRON-BEAM-INDUCED CURRENT. CSSC10. 2018
  9. イ ウェイ, 陳 君, 関口 隆史, 伊藤俊. カソードルミネッセンスによるm面GaNの積層欠陥に関する評価. 第65回応用物理学会春季学術講演会. 2018
  10. 陳 君, イ ウェイ, 関口 隆史, 生田目 俊秀, 江戸雅晴. 電子線誘起電流法によるGaN Schottky領域の転位と電流リーク箇所の観察. 第65回応用物理学会春季学術講演会. 2018
2016
  1. CHEN, Jun, Shun Ito, Jianyong Li, LUO, Xianjia, SEKIGUCHI, Takashi. EBIC Investigation of Dislocation Loops in SrTiO3. The 13th International Conference BIAMS . 2016
  2. 羅 顕佳, 陳 君, 関口 隆史. Investigation of Σ3 Generation on Random Grain Boundary in Multicrystalline Silicon. The 63rd JSAP Spring Meeting, 2016. 2016
  3. 陳 君, 李建永, 伊藤俊, 羅 顕佳, 関口 隆史. SrTiO3 抵抗スイッチング挙動とNbドーピングの関係. 第63回応用物理学会春季学術講演会. 2016
2015
  1. CHEN, Jun, SEKIGUCHI, Takashi. The transition of resistance switching mode in SrTiO3 by Nb doping. 25th Annual Meeting of MRS-J (2015). 2015
  2. CHEN, Jun, SEKIGUCHI, Takashi, Jianyong Li, Shun Ito . Investigation of dislocations in different Nb-doped (100) SrTiO3 single crystals and their impacts on resistive switching . The 16th DRIP conference. 2015
  3. LUO, Xianjia, PRAKASH, Ronit Roneel, CHEN, Jun, JIPTNER, Karolin, SEKIGUCHI, Takashi. Investigation of Σ3 Generation on Radom Grain Boundary in Multicrystalline Silicon. The 16th DRIP conference. 2015
  4. MIYAMURA, Yoshiji, SEKIGUCHI, Takashi, HARADA, Hirofumi, JIPTNER, Karolin, CHEN, Jun, PRAKASH, Ronit Roneel, Satoshi Nakano, Koichi Kakimoto. Single Seed Cast Si growth of 50 cm square ingots. 8th Int. Workshop on Crystak Silicon for Solar Cells . 2015
  5. PRAKASH, Ronit Roneel, JIPTNER, Karolin, CHEN, Jun, MIYAMURA, Yoshiji, HARADA, Hirofumi, SEKIGUCHI, Takashi. Grain Boundary Evolution in Multicrystalline Silicon Grown from Microcrystalline Silicon Template. 8th Int. Workshop on Crystak Silicon for Solar Cells . 2015
  6. プラカッシュ ロニト ロニル, イプトナー カロリン, 宮村 佳児, 陳 君, 原田 博文, 関口 隆史. Impact of Grain Boundary Interactions on Grain Structure of Multicrystalline Silicon. The 62nd JSAP Spring Meeting. 2015
  7. 陳 君, 李建永, 伊藤俊, 関口 隆史. SrTiO3電気抵抗スイッチングに関する転位の影響. 第62回応用物理学会春季学術講演会. 2015
2014
  1. PRAKASH, Ronit Roneel, JIPTNER, Karolin, MIYAMURA, Yoshiji, CHEN, Jun, HARADA, Hirofumi, SEKIGUCHI, Takashi. Impact of Growth Rate on Multicrystalline Silicon Grown from Small Randomly Oriented Seeds. The 6th World Conference on Photovoltaic Energy Conversion. 2014
  2. PRAKASH, Ronit Roneel, JIPTNERKarolin, CHEN, Jun, 宮村佳児, 原田博文, SEKIGUCHI, Takashi. Extended Defects in multicrystalline silicon grown by directional solidification using polycrystalline template. The 7th forum on the Science and Technology of Silicon Materials. 2014
  3. プラカッシュ ロニト ロニル, 宮村 佳児, 陳 君, イプトナー カロリン, 原田 博文, 関口 隆史. Grain Boundary Electrical Activity and Growth in Multicrystalline Silicon. The 75th JSAP Autumn Meeting 2014. 2014
  4. 陳 君, 李建永, イ ウェイ, 小椋厚志, 関口 隆史. 電子線誘起電流法によるSrTiO3結晶中の転位の電気特性評価. 第75回応用物理学会秋季学術講演会. 2014
  5. CHEN, Jun, LI, Jian-Yong, SEKIGUCHI, Takashi. Electron-beam-induced current study of dislocation related defects in (111) SrTiO3 single crystals. The 12th BIAMS Conference. 2014
  6. CHEN, Jun, Masayuki Fukuzawa, GAO, Hong, Deren Yang, SEKIGUCHI, Takashi. Characterization of Strain in Multicrystalline Silicon: Correlation between Grain Boundary Character and Strain. The 12th BIAMS Conference. 2014
  7. 陳 君, 福澤理行, プラカッシュ ロニト ロニル, 李 建永, イプトナー カロリン, 宮村 佳児, 原田 博文, 関口 隆史. 多結晶シリコン中粒界性格と歪みの関係. 第61回応用物理学会春季学術講演会. 2014
  8. 宮村 佳児, 原田 博文, 陳 君, 関口 隆史, 中野 智, 柿本浩一. 50cm 角mono cast Si 結晶成長 (Ⅱ). 第61 回応用物理学会春季学術講演会. 2014
  9. プラカッシュ ロニト ロニル, 宮村 佳児, 陳 君, イプトナー カロリン, 李 建永, 原田 博文, 関口 隆史. Grain Evolution in Multicrystalline Silicon Grown from Small Randomly Oriented Seeds. 61st JSAP Spring Meeting 2014. 2014
2013
  1. PRAKASH, Ronit Roneel, SEKIGUCHI, Takashi, JIPTNER, Karolin, MIYAMURA, Yoshiji, CHEN, Jun, CHEN Jun, LI, Jian-Yong, HARADA, Hirofumi. Directional Growth of Multicrystalline Silicon from Crucible and Microcrystal Template. 7th International Workshop on Crystalline Silicon Solar Cells. 2013
  2. プラカッシュ ロニト ロニル, 宮村 佳児, 陳 君, イプトナー カロリン, 李 建永, 原田 博文, 関口 隆史. Directional Growth of Multicrystalline Silicon from Microcrystal Feedstock. JSAP Autumn Meeting 2013. 2013
  3. MIYAMURA, Yoshiji, CHEN, Jun, PRAKASH, Ronit Roneel, JIPTNER, Karolin, HARADA, Hirofumi, SEKIGUCHI, Takashi. Dislocation generation and propagation across the grain boundaries and seed interfaces in cast Si. Defects Recognition, Imaging and Physics in Semiconductors. 2013
  4. SEKIGUCHI, Takashi, LI, Jian-Yong, CHEN, Jun, WATANABE, Kentaro, KUMAGAI, Kazuhiro, Atsushi Oguira. Focused Ion Beam Imaging of Defects in Si Materials for Photovoltaic and Semiconductor Use. Defects Recognition, Imaging and Physics in Semiconductors. 2013
  5. MIYAMURA, Yoshiji, HARADA, Hirofumi, JIPTNER, Karolin, CHEN, Jun, PRAKASH, Ronit Roneel, Satoshi Nakano, SEKIGUCHI, Takashi, Bin Gao, Koichi Kakimoto. Crystal growth of 50 cm square single crystal Si by directional solidification and its characterization . 17th International Conference on Crystal Growth and Epitaxy - IC. 2013
  6. PRAKASH, Ronit Roneel, SEKIGUCHI, Takashi, JIPTNERKarolin, 宮村佳児, CHEN, Jun, Kakimoto Koichi, 原田博文. Modelling of Unidirectional Solidification of Multicrystalline Si. 17th International Conference on Crystal Growth and Epitaxy . 2013
  7. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, CHEN, Jun, NGUYEN, Nam, NGUYEN Nam, SEKIGUCHI, Takashi, YAMASHITA, Yoshiyuki, YAGYU, Shinjiro, YOSHITAKE, Michiko. New materials discovery and their application for future nano electronics. INC9. 2013
  8. プラカッシュ ロニト ロニル, 宮村 佳児, 陳 君, イプトナー カロリン, 李 建永, 原田 博文, 関口 隆史. Grain Growth Behavior of Directionally Grown Multicrystalline Silicon. 60th JSAP Spring Meeting 2013. 2013
  9. 陳 君, プラカッシュ ロニト ロニル, 李 建永, イプトナー カロリン, 宮村 佳児, 原田 博文, 関口 隆史. 多結晶シリコン中転位分布の不均一性の解析. 第60回応用物理学会春季学術講演会 . 2013
  10. 知京 豊裕, 長田 貴弘, 生田目 俊秀, 山下 良之, 関口 隆史, 陳 君, Yongxun Lui, 昌原明植. ナノスケール機能性酸化物の多様性と次世代デバイスへの期待. 第60回応用物理学会春季学術講演会. 2013
  11. SOMU, Kumaragurubaran, CHIKYOW, Toyohiro, NAGATA, Takahiro, NABATAME, Toshihide, YOSHITAKE, Michiko, YAGYU, Shinjiro, CHEN, Jun, SEKIGUCHI, Takashi. COMBINATORIAL MATERIALS EXPLORATION FOR THE GATE STACK IN ADVANCED CMOS DEVICES. Second international workshop on advanced functional nanomateria. 2013
2012
  1. CHIKYOW, Toyohiro, OHI, Akihiko, NABATAME, Toshihide, NAGATA, Takahiro, YOSHITAKE, Michiko, CHEN, Jun, SEKIGUCHI, Takashi, OHMORI, Kenji. COMBINATORIAL MATERIALS EXPLORATION ON HIGH-K GATE OXIDE AND METAL GATE FOR FUTURE CMOS DEVICES. ISAEM-2012 -AMDI-3. 2012
  2. CHEN, Jun, LI, Jian-Yong, SEKIGUCHI, Takashi. Investigation of resistance switching mechanism in Pt/SrTiO3 Schottky junction by an electron-beam-induced current technique. ICEAN-2012. 2012
  3. MIYAMURA, Yoshiji, CHEN, Jun, CHEN, Bin, HARADA, Hirofumi, Shun Ito, SEKIGUCHI, Takashi. Characterization of grain boundaries in multicrystalline Si ingots. CSSC6. 2012
  4. MIYAMURA, Yoshiji, HARADA, Hirofumi, JIPTNER, Karolin, CHEN, Jun, LI, Jian-Yong, PRAKASH, Ronit Roneel, SEKIGUCHI, Takashi, Takuto Kojima, Yoshio Ohshita, Atsushi Ogura , Masayuki Fukuzawa, Satoshi Nakano, Bin Gao, Koichi Kakimoto. 10 cm diameter mono cast Si growth and its characterization. CSSC6. 2012
  5. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, Motoyuki Sato, TAKASE, Masami, Ryu Hasunuma, Kikuo Yamabe, Keisaku Yamada, CHIKYOW, Toyohiro. Observation of Leakage Sites in High-k Gate Stack by Using an Electron-Beam-Induced Current Technique . IUMRS- ICEM2012. 2012
  6. プラカッシュ ロニト ロニル, 宮村 佳児, 陳 君, イプトナー カロリン, 李 建永, 原田 博文, 関口 隆史. Impurity Decoration on Extended Defects in Multicrystalline Silicon. 73rd JSAP Autumn Meeting 2012. 2012
  7. 宮村 佳児, 原田 博文, イプトナー カロリン, 陳 君, プラカッシュ ロニト ロニル, 関口 隆史, 小島拓人, 大下祥雄, 小椋厚志, 福澤理行, 中野智, 高冰, 柿本浩一. 10cm径mono cast Si結晶成長. 応用物理学会. 2012
  8. SEKIGUCHI, Takashi, MIYAMURA, Yoshiji, CHEN, Jun, JIPTNER, Karolin, PRAKASH, Ronit Roneel, LI, Jian-Yong, Ogura Atsushi, HARADA, Hirofumi. Characterization of mono-like Si ingots for PV application by using EBIC, XRT, IR. Beam Injection Assessment on Microstructures in Semiconductors. 2012
  9. 渡辺 健太郎, 野久尾 毅, 陳 君, 関口 隆史. プローブEBIC 法による異種基板上AlInAs/GaInAs界面電子チャネル構造の欠陥評価 チャネル構造の欠陥評価. 日本顕微鏡学会 第68回学術講演会. 2012
  10. ギュエン ナム, 陳 君, Marcus Wilde, 知京 豊裕. Formation and Characterizatio of SiAlON for Hydrogen Storage Layer in MONOS Charge-Trapping Novolatile Memory Device. The 8th International Nanotechnology Conference on Communication. 2012
  11. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, Motoyuki Sato, TAKASE, Masami, Ryu Hasunuma, Kikuo Yamabe, Keisaku Yamada, CHIKYOW, Toyohiro. Investigation of local leakage sites in high-k/metal gate stacks by an electron-beam-induced current technique. The 8th International Nanotechnology Conference. 2012
  12. 陳 君, プラカッシュ ロニト ロニル, イプトナー カロリン, 李 建永, 原田 博文, 関口 隆史. 多結晶シリコン中の粒界と転位の相互作用. 2012年春季 第59回 応用物理学関係連合講演会. 2012
2011
  1. イプトナー カロリン, Kawakami Hideki, 陳 君, Suemasu Takashi, 関口 隆史. SEM, EBSD and EBIC characterizations of epitaxial β-FeSi2 thin films on Si substrate. 2011 Tsukuba Nanotechnology Symposium. 2011
  2. JIPTNER, Karolin, Kawakami Hideki, CHEN, Jun, Takashi Suemasu, SEKIGUCHI, Takashi. Characterization of epitaxial b-FeSi2 thin films on Si substrate by SEM, EBIC and EBSD imaging. PVSEC-21. 2011
  3. CHEN, Jun, SEKIGUCHI, Takashi. An Investigation of Grain Boundaries in Multicrystalline Silicon . 1st Low Carbon Earth Summit (LCES-2011) . 2011
  4. 滝口亮, 鈴木慶太郎, 深田 直樹, 菱田 俊一, 陳 君, 関口 隆史, 村上浩一. 低温オゾン酸化によるSiNWs中のB偏析抑制効果. 秋季第72回応用物理学会学術講演会. 2011
  5. CHIKYOW, Toyohiro, NAGATA, Takahiro, NABATAME, Toshihide, YOSHITAKE, Michiko, CHEN, Jun, SEKIGUCHI, Takashi. combinatorial materials research and screening for future nano electronics. the 6th CSIRO Advanced Materials Conference & Workshops . 2011
  6. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, Motoykuki Sato, TAKASE, Masami, Ryu Hasunuma, Kikuo Yamabe, Keisaku Yamada, CHIKYOW, Toyohiro. Characterization of High-k Gate Stacks by EBIC Technique. International Nanotechnology Conference on Communication and Coo. 2011
2010
  1. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, NGUYEN, Nam, YOSHITAKE, Michiko, CHEN, Jun, SEKIGUCHI, Takashi. Combinatorial materials design and its application for nano device in future. International Workshop on Materials Discovery by Scale-Bridging . 2010
  2. LI, Jian-Yong, CHEN, Jun, OHASHI, Naoki, OKUSHI, Hideyo, SAKAGUCHI, Isao, SEKIGUCHI, Takashi, HANEDA, Hajime. Characterization of Pt/SrTiO3:Nb junctions by electron beam induced current. 3rd International Congress on Ceramics. 2010
  3. SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin, LEE, Woong, ONODERA, Hisashi. EBIC and Cathodoluminescence Study on the Grain Boundaries and Fe Impurities in Multicrytstalline Si . Si forum:シリコン材料の科学と技術フォーラム2010. 2010
  4. OHASHI, Naoki, OKUSHI, Hideyo, LI, Jian-Yong, CHEN, Jun, UEDA, Shigenori, YOSHIKAWA, Hideki, YAMASHITA, Yoshiyuki, KOBAYASHI, Keisuke, SEKIGUCHI, Takashi, HANEDA, Hajime. Resistance switching at Pt/SrTiO3:Nb interface. MS&T Materials Science & Technology Conference & Exhibition 2010. 2010
  5. SEKIGUCHI, Takashi, CHEN, Jun, CHIKYOW, Toyohiro. Characterization of high-k dielectric films for MOSFET using Electron Beam Induced Current. IUMRS-ICA 2010. 2010
  6. 李 建永, 大橋 直樹, 陳 君, 大串 秀世, 関口 隆史, 羽田 肇. 電子ビーム誘起電流によるPt/SrTi1-xNbxO3接合の抵抗スイッチング特性評価. 応用物理学会講演会2010年(平成22年)秋季講演会. 2010
  7. 石田慎哉, 横野茂輝, 滝口亮, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. シリコンナノワイヤ中への水素導入効果. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  8. 横野茂輝, 石田慎哉, 滝口亮, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. SiナノワイヤへのO2+イオン注入効果. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  9. SEKIGUCHI, Takashi, CHEN, Jun, ONODERA, Hisashi, PRAKASH, Ronit Roneel. EBIC/CL classification of small angle grain boundaries in multicrystalline Si. E-MRS fall meeting. 2010
  10. 滝口亮, 石田慎哉, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. Siナノワイヤ中のBアクセプタ濃度分布の定量評価. 2010年秋季 第71回 応用物理学会学術講演会. 2010
  11. PRAKASH, Ronit Roneel, 小野寺尚志, CHEN, Jun, 陳斌, SEKIGUCHI, Takashi. Impurity decoration on extended defects in multicrystalline Silicon. Joint Symposium on Electronic Materials 2010. 2010
  12. イプトナー カロリン, 英輝川上, 陳 君, 末益, 関口 隆史. EBIC analysis of β-FeSi2/Si heterostructures for photovoltaic application. JSEM. 2010
  13. LI, Jian-Yong, CHEN, Jun, OKUSHI, Hideyo, SAKAGUCHI, Isao, SEKIGUCHI, Takashi, HANEDA, Hajime, OHASHI, Naoki. Characterization of Pt/SrTiO3:Nb junction showing resistance switching behavior. 7th Asian Meeting on Electroceramics (AMEC-7). 2010
  14. OHASHI, Naoki, ADACHI, Yutaka, SAKAGUCHI, Isao, LI, Baoe, LI, Jian-Yong, WILLIAMS, Jesse Robert, MATSUMOTO, Kenji, OGAKI, Takeshi, UEDA, Shigenori, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, OKUSHI, Hideyo, CHEN, Jun, SEKIGUCHI, Takashi, HANEDA, Hajime. Charge compensation in oxide semiconductors. International Symposium on Compound Semiconductor Week 2010. 2010
  15. CHIKYOW, Toyohiro, NAGATA, Takahiro, CHEN, Jun, SEKIGUCHI, Takashi, YOSHITAKE, Michiko, NABATAME, Toshihide. Strategy for new materials discovery for future nano electronics. International Nanotechnology Conference 6 (INC6). 2010
  16. CHIKYOW, Toyohiro, NABATAME, Toshihide, NAGATA, Takahiro, UMEZAWA, Naoto, YOSHITAKE, Michiko, SEKIGUCHI, Takashi, CHEN, Jun. Landscape of Materials Design for Future Nano Electronics and High-throughput Materials Exploration. 1st Singapore-Japan Workshop on Advances in nanomaterials. 2010
  17. 関口 隆史, 陳 君. 太陽電池用多結晶Siにおける結晶粒界の電気的・光学的作用. 日本金属学会 2010年春期大会. 2010
  18. 陳 君, 関口 隆史, 深田 直樹, 高瀬 雅美, 根本 善弘, 蓮沼隆, 山部紀久夫, 佐藤基之, 山田啓作, 知京 豊裕. EBICとTEMによる絶縁膜破壊したHigh-kゲートスタック構造の観察. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  19. 横野茂輝, 齋藤直之, 石田 慎哉, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. SiナノワイヤへのO2+イオン注入効果. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  20. 関口 隆史, 陳 君, 福澤理行. 太陽電池用多結晶シリコンにおける粒界の電気的・光学的・機械的特性. 2010年春期 第57回 応用物理学会. 2010
  21. 石田 慎哉, 齋藤直之, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. SiナノワイヤへのPイオン注入. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  22. 深田 直樹, 齋藤直之, 石田 慎哉, 横野茂輝, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. イオン注入によるSiナノワイヤへの不純物ドーピング. 2010年春季 第57回 応用物理学関係連合講演会. 2010
  23. 陳 君, 関口 隆史, 深田 直樹, 高瀬 雅美, 根本 善弘, 蓮沼隆, 山部紀久夫, 佐藤基之, 山田啓作, 知京 豊裕. EBICとTEMによってHigh-kゲートスタック構造のリーク電流欠陥の研究. 第10回High-kネット報告会. 2010
  24. OHASHI, Naoki, LI, Jian-Yong, CHEN, Jun, ADACHI, Yutaka, SAKAGUCHI, Isao, LI, Baoe, ZHEN, Yuhua, UEDA, Shigenori, YOSHIKAWA, Hideki, KOBAYASHI, Keisuke, OKUSHI, Hideyo, SEKIGUCHI, Takashi, HANEDA, Hajime. Oxide semiconductors for optoelectronics. MANA International Symposium 2010. 2010
  25. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, NEMOTO, Yoshihiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, CHIKYOW, Toyohiro. EBIC and TEM Investigations of Current Leakage Sites in High-k Gate Stacks. MANA International Symposium 2010. 2010
2009
  1. FUKATA, Naoki, Naoyuki Saito, SATO, Keisuke, CHEN, Jun, SEKIGUCHI, Takashi, MITOME, Masanori, BANDO, Yoshio, Kouichi Murakami. Doping and characterization of impurity atoms in Si and Ge nanowires. The 3rd International Conference on One-dimensional Nanomaterial. 2009
  2. FUKATA, Naoki, Naoyuki Saito, Shinya Ishida, Shigeki Yokono, SATO, Keisuke, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Impurity doping in silicon nanowires during and after synthesis by ion implantation. 2009 MRS Fall Meeting. 2009
  3. FUKATA, Naoki, CHEN, Jun, SEKIGUCHI, Takashi, Masanori Seoka, Naoyuki Saito, Kouichi Murakami. DOPING AND SEGREGATION OF IMPURITY ATOMS IN SILICON NANOWIRES SYNTHSIZED BY LASER ABLATION. The 10th International Conference on Laser Ablation. 2009
  4. 関口 隆史, 陳 君. 電子線誘起電流(EBIC)法による半導体材料・素子の評価. 第29回 LSIテスティングシンポジウム. 2009
  5. 陳斌, CHEN, Jun, SEKIGUCHI, Takashi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura. Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices. DRIP XIII. 2009
  6. 深田 直樹, 齋藤直之, 石田 慎哉, 横野茂輝, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. イオン注入によるSiナノワイヤへの不純物ドーピングと電気的活性化. 2009年秋季 第70回 応用物理学会 学術講演会. 2009
  7. 齋藤直之, 石田 慎哉, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. 短時間アニールを利用したBイオン注入Siナノワイヤの結晶性回復とBの電気的活性化. 2009年秋季 第70回 応用物理学会 学術講演会. 2009
  8. 石田 慎哉, 齋藤直之, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. P イオン注入後のSi ナノワイヤの結晶性回復とP の電気的活性化. 2009年秋季 第70回 応用物理学会 学術講演会. 2009
  9. FUKATA, Naoki, Masanori Seoka, Naoyuki Saito, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Doping and segregation of impurity atoms in silicon nanowires. ICDS25. 2009
  10. SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin, LEE, Woong, Masayuki Fukuzawa, Masayoshi Yamada. Electrical, Optical and Mechanical Properties . 3rd Int. Workshop on Crystalline Silicon Solar Cells. 2009
  11. 関口 隆史, 陳 君, 陳 斌, 李 雄. 多結晶Si 中の小角粒界の電気的・光学的作用. 第56回応用物理学関係連合講演会. 2009
  12. 陳 斌, 陳 君, 関口 隆史, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura. Electrical property of stacking faults in 4H-SiC. Annual Meeting - JSAP The 56th Spring Meeting. 2009
  13. 陳 君, 関口 隆史, 高瀬 雅美, 深田 直樹, 知京 豊裕, 蓮沼隆, 山部紀久夫, 佐藤基之, 奈良安雄, 山田啓作. EBICによるHigh-k/metal gate構造内の電気ストレス誘起欠陥発生のその場観察. 2009年春季第56回応用物理学関係連合講演会 . 2009
  14. 関口 隆史, 陳 君, 福澤理行, 山田正良. 多結晶Siにおける欠陥と残留歪の関係. 第56回応用物理学関係連合講演会. 2009
  15. 石田慎哉, 瀬岡雅典, 齋藤直之, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. イオン注入によるSiナノワイヤへのPドーピングと電気的活性化. 春季第56回応用物理学会学術講演会. 2009
  16. 横野茂輝, 瀬岡雅典, 齋藤直之, 石田慎哉, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. O2+およびAr+イオン注入後のSiナノワイヤ内部の結晶性回復過程. 春季第56回応用物理学会学術講演会. 2009
  17. 齋藤直之, 瀬岡雅典, 石田慎哉, 横野茂輝, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. Siナノワイヤへイオン注入したBの電気的活性化. 春季第56回応用物理学会学術講演会. 2009
  18. 深田 直樹, 瀬岡雅典, 齋藤直之, 陳 君, 関口 隆史, 村上浩一. Siナノワイヤ中にドープしたPおよびBの熱酸化過程での偏析挙動. 春季第56回応用物理学会学術講演会. 2009
2008
  1. FUKATA, Naoki, Masanori Seoka, Naoyuki Saito, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Phosphorus donors and boron acceptors in silicon nanowires synthesized by laser ablation. 2008MRS FASLL MEETING. 2008
  2. SEKIGUCHI, Takashi, DIERRE, Benjamin, Wang, JinBin, CHEN, Bin, CHEN, Jun. Cathodoluminescence and EBIC characterization of smart semiconductor materials. Chinese Materials Research Society (C- MRS) . 2008
  3. CHEN, Jun, SEKIGUCHI, Takashi, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara. Electron-beam-induced current characterization of high-k dielectrics. The 5th International Symposium on Advanced Science and Technolo. 2008
  4. CHEN, Jun, SEKIGUCHI, Takashi, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. Understanding of carrier transport in MOS device with high-k gate dielectric: an electron-beam-induced current study of leakage sites . 2008 International Workshop on Dielectric Thin Films (IWDTF-08). 2008
  5. FUKATA, Naoki, Masanori Seoka, Naoyuki Saito, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. B acceptors and P donors in silicon nanowires. 21st International Microprocesses and Nanotechnology Conference. 2008
  6. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, CHIKYOW, Toyohiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Yasuo Nara, Keisaku Yamada. Trap-Related Carrier Transports in p-FET with Poly-Si/HfSiON Gate Stack . The 2008 International Conference on Solid State Devices and Mat. 2008
  7. SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro. Imaging of Leakage Sites in High-k Gate Electrode by using Electron-beam-induced Current Technique. International Conference onSolid State Devices and Materials. 2008
  8. 深田 直樹, 瀬岡雅典, 齋藤直之, 陳 君, 関口 隆史, 村上浩一. シリコンナノワイヤへの不純物ドーピングと欠陥評価. 第18回 格子欠陥フォーラム. 2008
  9. 瀬岡雅典, 深田 直樹, 齋藤直之, 陳 君, 関口 隆史, 村上浩一. 熱酸化過程でのSiナノワイヤ中のPおよびBの偏析挙動. 2008年秋季 第69回応用物理学会学術講演会. 2008
  10. 齋藤直之, 瀬岡雅典, 深田 直樹, 陳 君, 関口 隆史, 菱田 俊一, 村上浩一. イオン注入によるSiナノワイヤへの不純物ドーピングと電気的活性化. 2008年秋季 第69回応用物理学会学術講演会. 2008
  11. 深田 直樹, 瀬岡雅典, 齋藤直之, 陳 君, 関口 隆史, 村上浩一. BおよびP を同時ドープしたSiナノワイヤでのキャリア補償効果. 2008年秋季 第69回応用物理学会学術講演会. 2008
  12. CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi. Correlation of electrical activity and structure of sigma 3 boundary in multicrystalline Si. 11th Joint Symposium of Electronic Materials (JSEM2008). 2008
  13. SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin. EBIC study of electrical activity of grain boundaries in multicrystalline Si - Impact of GB character and Fe contamination. E-MRS 2008 Spring Meeting. 2008
  14. CHEN, Jun, CHEN, Bin, SEKIGUCHI, Takashi, Masayuki Fukuzawa, Masayoki Yamada. Understanding of the Origin of Strong Recombination Activities at Small-Angle Grain Boundaries in Multicrystalline Si. The 4-th Asian Conference on Crystal Growth and Crystal Technolo. 2008
  15. CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Shun Ito. Effect of boundary plane on the recombination activity of Σ3 boundaries in multicrystalline silicon. 4th Asian Conference on Crystal Growth and Crystal Technology. 2008
  16. 関口 隆史, 陳 君, 陳 斌. 電子線誘起電流(EBIC)法によるSi系材料の欠陥物性評価/粒界の電気的特性を中心として. 2008年春季第55回応用物理学関係連合講演会. 2008
  17. 瀬岡雅典, 深田 直樹, 陳 君, 関口 隆史, 鶴井隆雄, 村上浩一. Siナノ細線へのPおよびBのコドーピングと酸素アニールによるP原子・B原子の偏析挙動. 春季第55回応用物理学会学術講演会. 2008
  18. 陳 君, 関口 隆史, 高瀬 雅美, 深田 直樹, 知京 豊裕, 蓮沼隆, 山部紀久夫, 左藤基之, 奈良安雄, 山田啓作. Comparison of Leakage Behaviors in pMOS and nMOS with Poly-Si/HfSiON Gate Stacks by EBIC Technique. 2008年春季第55回応用物理学関係連合講演会 . 2008
  19. 深田 直樹, 松下聡, 陳 君, 関口 隆史, 内田紀行, 村上浩一. PドープSiナノワイヤ中の欠陥の水素・酸素による不活性化とドナー濃度制御. 春季第55回応用物理学会学術講演会. 2008
  20. 深田 直樹, 松下聡, 瀬岡雅典, 陳 君, 関口 隆史, 村上浩一. Siナノワイヤ中に単独ドープしたPおよびBの熱酸化過程での偏析挙動. 春季第55回応用物理学会学術講演会. 2008
2007
  1. 深田 直樹, 松下聡, 岡田直也, 陳 君, 関口 隆史, 内田紀行, 村上浩一. レーザーアブレーション法で生成されたシリコンナノワイヤ中への不純物ドーピング. 第7回界面ナノアーキテクトニクスワークショップ. 2007
  2. SEKIGUCHI, Takashi, CHEN, Jun, CHEN, Bin. Electron-beam-induced current study of grain boundaries and their impurity decoration in multicrystalline Si. 2nd-International Workshop on Science and Technology of Crystall. 2007
  3. 深田 直樹, 陳 君, 関口 隆史, 村上浩一, 池本夕佳, 森脇太郎. SPring-8 BL43IRビームラインを利用したSiナノ細線の赤外吸収分光. 2007年秋季第68回応用物理学会学術講演会. 2007
  4. 瀬岡雅典, 深田 直樹, 松下聡, 陳 君, 関口 隆史, 鶴井隆雄, 村上浩一. Si ナノ細線へのP およびB のコドーピング. 2007年秋季第68回応用物理学会学術講演会. 2007
  5. FUKATA, Naoki, Satoshi Matsushita, CHEN, Jun, SEKIGUCHI, Takashi, Noriyuki Uchida, Kouichi Murakami, Takao Tsurui. Hydrogen passivation of P donors and defects in P-doped silicon nanowires synthesized by laser ablation. 24th International Conference on Defects in Semiconductors. 2007
  6. 深田 直樹, 大島崇, 岡田直也, 松下聡, 鶴井隆雄, 陳 君, 関口 隆史, 村上浩一. Siナノ細線への熱酸化応力誘起とフォノン閉じ込め効果. 第127回結晶工学分科会研究会「IV族系半導体のひずみエンジニアリン. 2007
  7. 瀬岡雅典, 松下聡, 深田 直樹, 鶴井隆雄, 陳 君, 関口 隆史, 内田紀行, 村上浩一. SiナノワイヤへのPドーピングと熱酸化によるPの偏析挙動. ナノ学会第5回大会. 2007
  8. 松下聡, 深田 直樹, 瀬岡雅典, 鶴井隆雄, 陳 君, 関口 隆史, 内田紀行, 村上浩一. 熱酸化によるPドープSiナノワイヤ中のP原子の偏析挙動. 2007年春季第54回応用物理学関係連合講演会. 2007
  9. 岡田直也, 瀬岡雅典, 深田 直樹, 陳 君, 関口 隆史, 鶴井隆雄, 内田紀行, 村上浩一. BドープSiナノ細線の水素パッシベーションによる効果. 2007年春季第54回応用物理学関係連合講演会. 2007
  10. 陳 君, 関口 隆史, 高瀬 雅美, 深田 直樹, 梅澤 直人, 大毛利 健治, 知京 豊裕, 蓮沼隆, 山部紀久夫, 犬宮誠治, 奈良安雄. Evolution of leakage sites in high-k dielectrics revealed by electron-beam-induced current (EBIC) technique. 2007年春季第54回応用物理学関係連合講演会. 2007
  11. 深田 直樹, 岡田直也, 鶴井隆雄, 陳 君, 関口 隆史, 内田紀行, 村上浩一. レーザーアブレーション法により生成したSiナノ細線へのBドーピング. 2007年春季第54回応用物理学関係連合講演会. 2007
  12. 関口 隆史, 陳 君, 伊藤俊. 電子線誘起電流(EBIC)法を用いた多結晶Si中の粒界の電気的活性度評価. 2007年春季第54回応用物理学関係連合講演会. 2007
  13. 深田 直樹, 大島崇, 岡田直也, 鶴井隆雄, 陳 君, 関口 隆史, 内田紀行, 村上浩一. レーザーアブレーション法により生成したSiナノ細線への不純物ドーピング. 筑波大学ナノサイエンス特別プロジェクト成果発表会. 2007
  14. 深田 直樹, 鶴井隆雄, 陳 君, 関口 隆史, 村上浩一. レーザーアブレーション法により生成したSiナノワイヤーへの不純物ドーピングと評価. High-Kネット研究会. 2007
2006
  1. FUKATA, Naoki, Naoya Okada, Satoshi Matsushita, Takao Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, Shun Ito, Noriyuki Uchida, Kouichi Murakami. Carrier doping in silicon nanowires synthesized by laser ablation. 2006 MRS FALL Meeting. 2006
  2. FUKATA, Naoki, Naoya Okada, Satoshi Matsushita, Takao Tsurui, Shun Ito, CHEN, Jun, SEKIGUCHI, Takashi, Noriyuki Uchida, Kouichi Murakami. Carrier doping of silicon nanowires synthesized by laser ablation. 2006 MRS FASLL MEETING. 2006
  3. CHEN, Jun, SEKIGUCHI, Takashi, Shun ITO. Small-angle grain boundaries in multicrystalline silicon. EDS2006. 2006
  4. Yuan, Xiaoli, CHEN, Jun, SEKIGUCHI, Takashi, Ri Sunggi, Shun Ito. Electron-beam-induced current study of dislocations at the interface of strained Si/Si0.8Ge0.2. EDS2006. 2006
  5. SEKIGUCHI, Takashi, CHEN, Jun, Deren Yang. Electron Beam Induced Current Study of Grain Boundaries in Multicrystalline Si. EDS2006. 2006
  6. CHEN, Jun, Yuan, Xiaoli, SEKIGUCHI, Takashi. Advanced electron beam induced current study for various Si based materials. 16th International Microscopy Congress. 2006
  7. 岡田直也, 深田 直樹, 陳 君, 関口 隆史, 鶴井隆雄, 村上浩一. レーザーアブレーション法により生成されたSiナノ細線中へのBドーピングと水素パッシベーション効果. 2006年秋季第67回応用物理学会学術講演会. 2006
  8. 関口 隆史, 陳 君, 高瀬 雅美, 深田 直樹, 梅澤 直人, 大毛利 健治, 知京 豊裕, 蓮沼隆, 山部紀久夫, 犬宮誠治, 奈良安雄. EBIC法によるHfSiON MOSFETのリーク箇所の観察. 日本応用物理学会. 2006
  9. FUKATA, Naoki, Takashi Oshima, Naoya Okada, Takao Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Detection of phonon confinement and boron local vibrational mode in one-dimensional silicon nanowires by micro-Raman scattering measurements. 20th International Conference on Raman Spectroscopy. 2006
  10. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, CHIKYOW, Toyohiro, K. Yamabe, R. Hasunuma, Y. Akasaka, Seiji Inumiya, Yasuo Nara, Keisaku Yamada. Observation of leakage sites in a HfSiON gate dielectric of a MOSFET device by electron-beam-induced current. The 8th International Workshop on BIAMS . 2006
  11. 岡田直也, 深田 直樹, 大島崇, 陳 君, 関口 隆史, 村上浩一. レーザーアブレーション法により生成したBドープSiナノ細線のラマン散乱測定. 2006年春季第53回応用物理学関係連合講演会. 2006
  12. CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, CHIKYOW, Toyohiro. Observation of leakage sites in a HfSiON gate dielectric of a MOSFET device by electron-beam-induced current method. 4th NIMS International Conference on Photonic Processes in Semic. 2006
  13. 深田 直樹, 大島崇, 岡田直也, 陳 君, 関口 隆史, 木塚徳志, 鶴井隆雄, 伊藤俊, 内田紀行, 村上浩一. レーザーアブレーションで生成されたシリコンナノ細線中のフォノン閉じ込めとドーピング効果. つくばone-dayワークショップ:ナノとバイオの接点. 2006
  14. 深田 直樹, 大島崇, 岡田直也, 木塚徳志, 鶴井隆雄, 伊藤俊, 陳 君, 関口 隆史, 内田紀行, 村上浩一. レーザーアブレーションで生成されたシリコンナノ細線中のフォノン閉じ込めとドーピング. IAMF/ICYS Workshop 2006. 2006
2005
  1. SEKIGUCHI, Takashi, ITO Shun, Yuan, Xiaoli, XIE Rongguo, CHEN, Jun, DEREN Yang. EBIC and Cathodoluminescence characterization of artificial grain boundaries formed in direct-bonded Si wafers. 3rd Asian Conference on Crysdtal Growth and Crystal Technology. 2005
  2. 陳 君, 関口 隆史, 楊徳仁. EBIC study of hydrogen passivation on grain boundaries in multicrystalline silicon:Influence of GB character and impurity contam. 結晶シリコン太陽電池の高効率化における材料学的アプローチ. 2005
  3. 関口 隆史, 陳 君, 袁 暁利, 伊藤俊. EBICによる粒界物性評価. 結晶シリコン太陽電池の高効率化における材料学的アプローチ. 2005

その他の文献 TSV

2012
  1. Yoshiji Miyamura, Hirofumi Harada, Shun Ito, Jun Chen, Takashi Sekiguchi. Structural Study of Small Angle Grain Boundaries in Multicrystalline Si. Materials Science Forum. 725 (2012) 157-160 10.4028/www.scientific.net/msf.725.157

特許 TSV

登録特許
    公開特許出願
      外国特許

        ▲ページトップへ移動