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Electron-beam-induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes
DRIP XVIII. September 08, 2019-September 12, 2019.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2019-09-20 03:00:21 +0900 Updated at: 2019-09-20 03:00:21 +0900