Negatively charged boron vacancies in hexagonal boron nitride (h-BN) have potential applications in quantum sensors, while neutral boron vacancies do not serve this function. Previously, there has been no established method to identify the charge states of atomic vacancies or analyze their concentration distribution. In this study, we achieved nanometer-resolution visualization of concentration distribution and differentiation of charge states by using spectroscopic measurements with low-energy, monochromated electrons. This technique may also aid in the analysis of point defects in semiconductor materials.

Created at: 2025-09-09 03:11:17 +0900 Updated at: 2026-10-22 04:31:01 +0900