Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown <i>m</i> ‐Plane GaN Substrate | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown m ‐Plane GaN Substrate

Jun Chen, Wei Yi, Shun Ito, Takashi Sekiguchi.

physica status solidi (a) 218 [14] 2100175. 2021.

https://doi.org/10.1002/pssa.202100175

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陳君

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-11-17 03:37:14 +0900更新時刻: 2025-01-09 06:43:47 +0900

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