Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown
            <i>m</i>
            ‐Plane GaN Substrate

Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown m ‐Plane GaN Substrate

著者	Jun Chen, Wei Yi, Shun Ito, Takashi Sekiguchi.
掲載誌名	physica status solidi (a) 218 [14] 2100175 ISSN: 18626319, 18626300, 00318965 ESIでのカテゴリ: PHYSICS
出版社	Wiley
発表年	2021
言語	English
DOI	https://doi.org/10.1002/pssa.202100175
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