publication_type publication_year number author title journal_title volume_number issue_number start_page end_page doi reported_at Paper 2023 1 Jun Chen, Hiroyuki Sazawa, Wei Yi, Takashi Sekiguchi Journal of Electronic Materials 52 8 5075 5083 https://doi.org/10.1007/s11664-023-10336-7 2024-03-29 14:15:58 +0900 Paper 2023 2 Can He, Takashi Takeda, Zhaohui Huang, Jian Xu, Jun Chen, Wei Yi, Rongjun Xie, Naoto Hirosaki Chemical Engineering Journal 455 140932 https://doi.org/10.1016/j.cej.2022.140932 2024-03-29 14:15:58 +0900 Paper 2022 1 Jingmin Tang, Soichiro Takeuchi, Masaki Tanaka, Hiroto Tomita, Yusuke Hashimoto, Takahiro Nagata, Jun Chen, Takuo Ohkochi, Yoshinori Kotani, Tomohiro Matsushita, Yoshiyuki Yamashita ACS Applied Electronic Materials 4 9 4719 4723 https://doi.org/10.1021/acsaelm.2c00912 2024-03-29 14:15:58 +0900 Paper 2022 2 Jia He, Jun Chen, Cheng Zheng, Zetan Cao, Zhiwen Liu, Chuangwei Jiao, Bin Chen, Takashi Sekiguchi, Dongping Zhong The Journal of Physical Chemistry C 126 37 16042 16049 https://doi.org/10.1021/acs.jpcc.2c05585 2024-03-29 14:15:58 +0900 Paper 2022 3 Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono Journal of Applied Physics 131 18 185701 https://doi.org/10.1063/5.0087248 2024-03-29 14:15:58 +0900 Paper 2022 4 Masaya Morita, Keiji Ishibashi, Kenichiro Takahashi, Shigenori Ueda, Jun Chen, Kota Tatejima, Toyohiro Chikyow, Atsushi Ogura, Takahiro Nagata Japanese Journal of Applied Physics 61 SC SC1071 https://doi.org/10.35848/1347-4065/ac4ad7 2024-03-29 14:15:58 +0900 Paper 2021 1 Yaxin Chen, Daiming Tang, Zhiwei Huang, Xi Liu, Jun Chen, Takashi Sekiguchi, Weiye Qu, Junxiao Chen, Dongrun Xu, Yoshio Bando, Xiaolei Hu, Xiaoping Wang, Dmitri Golberg, Xingfu Tang Stable single atomic silver wires assembling into a circuitry-connectable nanoarray Nature Communications 12 1 https://doi.org/10.1038/s41467-021-21462-3 2024-03-29 14:15:58 +0900 Paper 2021 2 Takuto Mizoguchi, Toshifumi Imajo, Jun Chen, Takashi Sekiguchi, Takashi Suemasu, Kaoru Toko Composition dependent properties of p- and n-type polycrystalline group-IV alloy thin films Journal of Alloys and Compounds 887 161306 https://doi.org/10.1016/j.jallcom.2021.161306 2024-03-29 14:15:58 +0900 Paper 2021 3 Jun Chen, Wei Yi, Shun Ito, Takashi Sekiguchi "Cathodoluminescence Investigation of Stacking Faults and Dislocations in the Edge Part of Seed‐Grown m ‐Plane GaN Substrate" physica status solidi (a) 218 14 2100175 https://doi.org/10.1002/pssa.202100175 2024-03-29 14:15:58 +0900 Paper 2020 1 A. Ogura, W. Yi, J. Chen, H. Suzuki, M. Imaizumi Cathodoluminescence Study of Dislocations in Step-Graded InGaP Buffer Layers of Metamorphic Single-Junction InGaAs Solar Cells Journal of Electronic Materials 49 9 5219 5225 https://doi.org/10.1007/s11664-020-08259-8 2024-03-29 14:15:58 +0900 Paper 2020 2 Jun Chen, Wei Yi, Ashutosh Kumar, Akio Iwanade, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Shun Ito, Takashi Kimura, Tadakatsu Ohkubo, Takashi Sekiguchi Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes Journal of Electronic Materials 49 9 5196 5204 https://doi.org/10.1007/s11664-020-08081-2 2024-03-29 14:15:58 +0900 Paper 2020 3 Wei Yi, Jun Chen, Takashi Sekiguchi Electron-Beam-Induced Current and Cathodoluminescence Study of Dislocations in SrTiO3 Crystals 10 9 736 https://doi.org/10.3390/cryst10090736 2024-03-29 14:15:58 +0900 Paper 2020 4 Ashutosh Kumar, Wei Yi, Jun Uzuhashi, Tadakatsu Ohkubo, Jun Chen, Takashi Sekiguchi, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kazuhiro Hono Influence of implanted Mg concentration on defects and Mg distribution in GaN Journal of Applied Physics 128 6 065701 https://doi.org/10.1063/5.0014717 2024-03-29 14:15:58 +0900 Paper 2020 5 Wei Yi, Ashutosh Kumar, Jun Uzuhashi, Takashi Kimura, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Yongzhao Yao, Yukari Ishikawa, Jun Chen, Tadakatsu Ohkubo, Takashi Sekiguchi, Kazuhiro Hono Mg diffusion and activation along threading dislocations in GaN Applied Physics Letters 116 24 242103 https://doi.org/10.1063/5.0009596 2024-03-29 14:15:58 +0900 Paper 2020 6 Takahiro Nagata, Tomohiro Yamaguchi, Shigenori Ueda, Wei Yi, Jun Chen, Takuya Kobayashi, Hirokazu Yokoo, Tohru Honda, Yoshiyuki Yamashita, Toyohiro Chikyow Photoelectron spectroscopic study on electronic state of corundum In2O3 epitaxial thin film grown by mist-CVD Japanese Journal of Applied Physics 59 SI SIIG12 https://doi.org/10.35848/1347-4065/ab84b2 2024-03-29 14:15:58 +0900 Paper 2019 1 Peng Wang, Wei Yi, Jun Chen, Shun Ito, Can Cui, Takashi Sekiguchi Oxygen vacancy migration along dislocations in SrTiO3 studied by cathodoluminescence Journal of Physics D: Applied Physics 52 47 475103 https://doi.org/10.1088/1361-6463/ab3b3e 2024-03-29 14:15:58 +0900 Paper 2019 2 Wei Yi, Jun Uzuhashi, Jun Chen, Takashi Kimura, Satoshi Kamiyama, Tetsuya Takeuchi, Tadakatsu Ohkubo, Takashi Sekiguchi, Kazuhiro Hono Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires Applied Physics Express 12 8 085003 https://doi.org/10.7567/1882-0786/ab2e37 2024-03-29 14:15:58 +0900 Paper 2019 3 Jaemyung Kim, Okkyun Seo, Atsushi Tanaka, Jun Chen, Kenji Watanabe, Yoshio Katsuya, Toshihide Nabatame, Yoshihiro Irokawa, Yasuo Koide, Osami Sakata Anisotropic mosaicity and lattice-plane twisting of an m-plane GaN homoepitaxial layer CrystEngComm 21 27 4036 4041 https://doi.org/10.1039/c9ce00463g 2024-03-29 14:15:58 +0900 Paper 2019 4 Wei Yi, Jun Chen, Seiji Higuchi, Takashi Sekiguchi Wafer-scale analysis of GaN substrate wafer by imaging cathodoluminescence Applied Physics Express 12 5 051005 https://doi.org/10.7567/1882-0786/ab0db8 2024-03-29 14:15:58 +0900 Paper 2019 5 Jun Chen, Wei Yi, Takashi Kimura, Shinya Takashima, Masaharu Edo, Takashi Sekiguchi Cathodoluminescene study of Mg implanted GaN: the impact of dislocation on Mg diffusion Applied Physics Express 12 5 051010 https://doi.org/10.7567/1882-0786/ab14cb 2024-03-29 14:15:58 +0900 Paper 2018 1 Wei Yi, Jun Chen, Shun Ito, Koji Nakazato, Takashi Kimura, Takashi Sekiguchi, Kozo Fujiwara Investigation of Si Dendrites by Electron-Beam-Induced Current Crystals 8 8 317 https://doi.org/10.3390/cryst8080317 2024-03-29 14:15:58 +0900 Paper 2016 1 Shengping Wang, Shuang Xie, Guowei Huang, Hongxuan Guo, Yujin Cho, Jun Chen, Daisuke Fujita, Mingsheng Xu Grassy Silica Nanoribbons and Strong Blue Luminescence Scientific Reports 6 1 https://doi.org/10.1038/srep34231 2024-03-29 14:15:58 +0900 Paper 2016 2 Jun Chen, Takashi Sekiguchi, Jianyong Li, Shun Ito Investigation of dislocations in Nb-doped (100) SrTiO3 single crystals and their impacts on resistive switching Superlattices and Microstructures 99 182 185 https://doi.org/10.1016/j.spmi.2016.03.013 2024-03-29 14:15:58 +0900 Paper 2016 3 Xianjia Luo, Ronit R. Prakash, Jun Chen, Karolin Jiptner, Takashi Sekiguchi Effect of Σ3 generation on random grain boundaries in multicrystalline silicon Superlattices and Microstructures 99 136 139 https://doi.org/10.1016/j.spmi.2016.03.032 2024-03-29 14:15:58 +0900 Paper 2016 4 SEKIGUCHI, Takashi, CHEN, Jun Defect Characterization in Silicon by Electron-Beam-Induced Current and Cathodoluminescence Techniques Defects and Impurities in Silicon Materials: An Introduction to Atomic-Level Silicon Engineering 946 "" 343 373 2024-03-29 14:15:58 +0900 Paper 2015 1 Ronit R. Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi Control of extended defects in cast multicrystalline silicon using polycrystalline template physica status solidi (c) 12 8 1099 1102 https://doi.org/10.1002/pssc.201400299 2024-03-29 14:15:58 +0900 Paper 2015 2 Takashi Sekiguchi, Karolin Jiptner, Ronit R. Prakash, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Satoshi Nakano, Bin Gao, Koichi Kakimoto, SEKIGUCHI, Takashi, JIPTNER, Karolin, PRAKASH, Ronit Roneel, CHEN, Jun, MIYAMURA, Yoshiji, HARADA, Hirofumi, Satoshi Nakano, Bin Gao, Koichi Kakimoto Control of extended defects in cast and seed cast Si ingots for photovoltaic application PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS 12 8 1094 1098 2024-03-29 14:15:58 +0900 Paper 2015 3 Jun Chen, Takashi Sekiguchi, Jianyong Li, Shun Ito, Wei Yi, Atsushi Ogura Investigation of dislocations in Nb-doped SrTiO3 by electron-beam-induced current and transmission electron microscopy Applied Physics Letters 106 10 102109 https://doi.org/10.1063/1.4915298 2024-03-29 14:15:58 +0900 Paper 2015 4 Ronit R. Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Takashi Sekiguchi Grain boundary interactions in multicrystalline silicon grown from small randomly oriented seeds Applied Physics Express 8 3 035502 https://doi.org/10.7567/apex.8.035502 2024-03-29 14:15:58 +0900 Paper 2014 1 Y. Miyamura, H. Harada, K. Jiptner, J. Chen, R.R. Prakash, S. Nakano, B. Gao, K. Kakimoto, T. Sekiguchi Crystal growth of 50 cm square mono-like Si by directional solidification and its characterization Journal of Crystal Growth 401 133 136 https://doi.org/10.1016/j.jcrysgro.2014.03.016 2024-03-29 14:15:58 +0900 Paper 2014 2 Ronit R. Prakash, Takashi Sekiguchi, Karolin Jiptner, Yoshiji Miyamura, Jun Chen, Hirofumi Harada, Koichi Kakimoto Grain growth of cast-multicrystalline silicon grown from small randomly oriented seed crystal Journal of Crystal Growth 401 717 719 https://doi.org/10.1016/j.jcrysgro.2014.01.067 2024-03-29 14:15:58 +0900 Paper 2014 3 Bin Chen, Jun Chen, Yuanzhao Yao, Takashi Sekiguchi, Hirofumi Matsuhata, Hajime Okumura In situ monitoring of stacking fault formation and its carrier lifetime mediation in p-type 4H-SiC Applied Physics Letters 105 4 042104 https://doi.org/10.1063/1.4891834 2024-03-29 14:15:58 +0900 Paper 2014 4 Kentaro Watanabe, Takeshi Nokuo, Jun Chen, Takashi Sekiguchi プローブEBIC 法によるn-AlInAs/i-GaInAs電子チャネル構造の局所電気特性評価 Microscopy 63 2 161 166 https://doi.org/10.1093/jmicro/dft050 2024-03-29 14:15:58 +0900 Paper 2014 5 Y. Miyamura, J. Chen, R.R. Prakash, K. Jiptner, H. Harada, T. Sekiguchi Dislocation Generation and Propagation across the Seed in Seed Cast-Si Ingots Acta Physica Polonica A 125 4 1024 1026 https://doi.org/10.12693/aphyspola.125.1024 2024-03-29 14:15:58 +0900 Paper 2014 6 Y. Miyamura, T. Sekiguchi, J. Chen, J.Y. Li, K. Watanabe, K. Kumagai, A. Ogura Focused Ion Beam Imaging of Defects in Multicrystalline Si for Photovoltaic Application Acta Physica Polonica A 125 4 991 993 https://doi.org/10.12693/aphyspola.125.991 2024-03-29 14:15:58 +0900 Paper 2013 1 Jianyong Li, Ronit Roneel Prakash, Karolin Jiptner, Jun Chen, Yoshiji Miyamura, Hirofumi Harada, Koichi Kakimoto, Atsushi Ogura, Takashi Sekiguchi Butterfly-shaped distribution of SiNx precipitates in multi-crystalline Si for solar cells Journal of Crystal Growth 377 37 42 https://doi.org/10.1016/j.jcrysgro.2013.03.051 2024-03-29 14:15:58 +0900 Paper 2011 1 Keiichi Akutsu, Hideki Kawakami, Mitsushi Suzuno, Takashi Yaguchi, Karolin Jiptner, Jun Chen, Takashi Sekiguchi, Teruhisa Ootsuka, Takashi Suemasu Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy Journal of Applied Physics 109 12 123502 https://doi.org/10.1063/1.3596565 2024-03-29 14:15:58 +0900 Paper 2011 2 Hideki Kawakami, Mitsushi Suzuno, Keiichi Akutsu, Jun Chen, Karolin Jiptner, Takashi Sekiguchi, Takashi Suemasu Effect of Introducing β-FeSi2Template Layers on Defect Density and Minority Carrier Diffusion Length in Si Region near p-β-FeSi2/n-Si Heterointerface Japanese Journal of Applied Physics 50 4 041303 https://doi.org/10.1143/jjap.50.041303 2024-03-29 14:15:58 +0900 Paper 2011 3 Naoki Fukata, Shinya Ishida, Shigeki Yokono, Ryo Takiguchi, Jun Chen, Takashi Sekiguchi, Kouichi Murakami Siナノワイヤ中のドーパント原子の偏析挙動と動径分布 Nano Letters 11 2 651 656 https://doi.org/10.1021/nl103773e 2024-03-29 14:15:58 +0900 Paper 2010 1 Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura Electrical and Optical Properties of Stacking Faults in 4H-SiC Devices Journal of Electronic Materials 39 6 684 687 https://doi.org/10.1007/s11664-010-1168-6 2024-03-29 14:15:58 +0900 Paper 2010 2 Masayuki Fukuzawa, Masayoshi Yamada, Md. Rafiqul Islam, Jun Chen, Takashi Sekiguchi Quantitative Photoelastic Characterization of Residual Strains in Grains of Multicrystalline Silicon Journal of Electronic Materials 39 6 700 703 https://doi.org/10.1007/s11664-010-1164-x 2024-03-29 14:15:58 +0900 Paper 2009 1 Bin Chen, Jun Chen, Takashi Sekiguchi, Mitsuhiro Saito, Koji Kimoto Structural characterization and iron detection at Σ3 grain boundaries in multicrystalline silicon Journal of Applied Physics 105 11 113502 https://doi.org/10.1063/1.3129583 2024-03-29 14:15:58 +0900 Paper 2009 2 CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, Filippo Fabbri Electrical activities of stacking faults and partial dislocations in 4H-SiC homoepitaxial films SUPERLATTICES AND MICROSTRUCTURES 295 300 2024-03-29 14:15:58 +0900 Paper 2009 3 Woong Lee, Jun Chen, Bin Chen, Jiho Chang, Takashi Sekiguchi Cathodoluminescence study of dislocation-related luminescence Applied Physics Letters 94 11 112103 https://doi.org/10.1063/1.3099001 2024-03-29 14:15:58 +0900 Paper 2008 1 CHEN, Bin, CHEN, Jun, SEKIGUCHI, Takashi, Akimasa Kinishita, Hirofumi Matsuhata, Hirotaka Yamaguchi, Ichirou Nagai, Hajime Okumura Electron-Beam Induced Current Study of Electrical activity of dislocations in 4H-SiC homoepitaxial films JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS S219 S223 2024-03-29 14:15:58 +0900 Paper 2008 2 N. Fukata, M. Mitome, Y. Bando, M. Seoka, S. Matsushita, K. Murakami, J. Chen, T. Sekiguchi レーザーアブレーションにより生成したシリコンナノワイヤへのボロン及びリンのコドーピング Applied Physics Letters 93 20 203106 https://doi.org/10.1063/1.3033226 2024-03-29 14:15:58 +0900 Paper 2008 3 FUKATA, Naoki, Satoshi Matsushita, Naoya Okada, CHEN, Jun, SEKIGUCHI, Takashi, Noriyuki Uchida, Kouichi Murakami レーザーアブレーション法で生成されたシリコンナノワイヤ中への不純物ドーピング APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING 589 592 2024-03-29 14:15:58 +0900 Paper 2008 4 Jun Chen, Bin Chen, Takashi Sekiguchi, Masayuki Fukuzawa, Masayoki Yamada Correlation between residual strain and electrically active grain boundaries in multicrystalline silicon Applied Physics Letters 93 11 112105 https://doi.org/10.1063/1.2983649 2024-03-29 14:15:58 +0900 Paper 2008 5 Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, Filippo Fabbri Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode Applied Physics Letters 93 3 033514 https://doi.org/10.1063/1.2960339 2024-03-29 14:15:58 +0900 Paper 2008 6 J. Chen, X. Yuan, T. Sekiguchi Advanced semiconductor diagnosis by multidimensional electron-beam-induced current technique Scanning 30 4 347 353 https://doi.org/10.1002/sca.20116 2024-03-29 14:15:58 +0900 Paper 2008 7 Jun Chen, Takashi Sekiguchi, Naoki Fukata, Masami Takase, Toyohiro Chikyo, Kikuo Yamabe, Ryu Hasunuma, Motoyuki Sato, Yasuo Nara, Keisaku Yamada Comparison of leakage behaviors in p- and n-type metal-oxide-semiconductor capacitors with hafnium silicon oxynitride gate dielectric by electron-beam-induced current Applied Physics Letters 92 26 262103 https://doi.org/10.1063/1.2952829 2024-03-29 14:15:58 +0900 Paper 2008 8 Teruhisa Ootsuka, Takashi Suemasu, Jun Chen, Takashi Sekiguchi, Yoshiaki Hara Applied Physics Letters 92 19 192114 https://doi.org/10.1063/1.2929744 2024-03-29 14:15:58 +0900 Paper 2008 9 Teruhisa Ootsuka, Takashi Suemasu, Jun Chen, Takashi Sekiguchi Evaluation of minority-carrier diffusion length in n-type beta-FeSi2 single crystals by electron-beam-induced current Applied Physics Letters 92 4 042117 https://doi.org/10.1063/1.2835904 2024-03-29 14:15:58 +0900 Paper 2007 1 Jun Chen, Takashi Sekiguchi Carrier Recombination Activity and Structural Properities of Small-Angle Grain Boundaires in Mc-Si Japanese Journal of Applied Physics 46 10A 6489 6497 https://doi.org/10.1143/jjap.46.6489 2024-03-29 14:15:58 +0900 Paper 2007 2 関口 隆史, 陳 君, 袁 暁利 電子線誘起電流法(EBIC)を使ったシリコン系機能材料の特性評価 顕微鏡 42 2 84 88 2024-03-29 14:15:58 +0900 Paper 2007 3 Xingbo Liang, Lei Wang, Xiangyang Ma, Dongsheng Li, Peihong Cheng, Deren Yang, Jun Chen, Takashi Sekiguchi Enhanced red electroluminescence from a polycrystalline diamond film/Si heterojunction structure Applied Physics Letters 90 16 161123 https://doi.org/10.1063/1.2730584 2024-03-29 14:15:58 +0900 Paper 2007 4 N. Fukata, J. Chen, T. Sekiguchi, S. Matsushita, T. Oshima, N. Uchida, K. Murakami, T. Tsurui, S. Ito レーザーアブレーションにより生成されたSiナノワイヤへのPドーピングと水素パッシベーション効果 Applied Physics Letters 90 15 153117 https://doi.org/10.1063/1.2721377 2024-03-29 14:15:58 +0900 Paper 2006 1 J. Chen, T. Sekiguchi, N. Fukata, M. Takase, T. Chikyow, K. Yamabe, R. Hasunuma, Y. Akasaka, S. Inumiya, Y. Nara, K. Yamada EBIC法によるHfSiON MOSFETのリーク箇所の観察 Applied Physics Letters 89 22 222104 https://doi.org/10.1063/1.2392988 2024-03-29 14:15:58 +0900 Paper 2006 2 N. Fukata, J. Chen, T. Sekiguchi, N. Okada, K. Murakami, T. Tsurui, S. Ito シリコンナノワイヤへのボロンドーピングと水素パッシベーション効果 Applied Physics Letters 89 20 203109 https://doi.org/10.1063/1.2372698 2024-03-29 14:15:58 +0900 Paper 2006 3 関口 隆史, 陳 君, 伊藤俊 電子線誘起電流(EBIC)法を用いた多結晶シリコンにおける粒界の電気的活性度評価 まてりあ 45 10 729 733 2024-03-29 14:15:58 +0900 Paper 2005 1 Jun Chen, Deren Yang, Zhenqiang Xi, Takashi Sekiguchi Physica B: Condensed Matter 364 1-4 162 169 https://doi.org/10.1016/j.physb.2005.04.008 2024-03-29 14:15:58 +0900 Paper 2005 2 J CHEN, T SEKIGUCHI, R XIE, P AHMET, T CHIKYO, D YANG, S ITO, F YIN Scripta Materialia 52 12 1211 1215 https://doi.org/10.1016/j.scriptamat.2005.03.010 2024-03-29 14:15:58 +0900 Paper 2005 3 Jun Chen, Deren Yang, Zhenqiang Xi, Takashi Sekiguchi Journal of Applied Physics 97 3 033701 https://doi.org/10.1063/1.1836009 2024-03-29 14:15:58 +0900 Paper 2004 1 J. Chen, T. Sekiguchi, D. Yang, F. Yin, K. Kido, S. Tsurekawa Journal of Applied Physics 96 10 5490 5495 https://doi.org/10.1063/1.1797548 2024-03-29 14:15:58 +0900 Paper 2004 2 S. Nara, T. Sekiguchi, J. Chen High quality multicrystalline silicon grown by multi-stage solidification control method The European Physical Journal Applied Physics 27 1-3 389 392 https://doi.org/10.1051/epjap:2004063 2024-03-29 14:15:58 +0900 Paper 2004 3 J Chen, T Sekiguchi, S Nara, D Yang The characterization of high quality multicrystalline silicon by the electron beam induced current method Journal of Physics: Condensed Matter 16 2 S211 S216 https://doi.org/10.1088/0953-8984/16/2/025 2024-03-29 14:15:58 +0900