研究内容
- Keywords
３次元アトムプローブ (APT)、電子顕微鏡法 (SEM & (S)TEM)、集束イオンビーム (FIB)
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Jun Uzuhashi, Tadakatsu Ohkubo. Systematic study of FIB-induced damage for the high-quality TEM sample preparation. Ultramicroscopy. 262 (2024) 113980 10.1016/j.ultramic.2024.113980 Open Access
- Jun Uzuhashi, Yuanzhao Yao, Tadakatsu Ohkubo, Takashi Sekiguchi. Experimental investigation and simulation of SEM image intensity behaviors for developing thickness-controlled S/TEM lamella preparation via FIB-SEM. Microscopy. 74 [4] (2025) 279-285 10.1093/jmicro/dfaf006 Open Access
- Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing. Journal of Applied Physics. 131 [18] (2022) 185701 10.1063/5.0087248 Open Access
会議録
- Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski. Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam. 2025 22nd International Workshop on Junction Technology (IWJT). (2025) 79-82 10.23919/iwjt66253.2025.11072893
- Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, Masaharu Edo. Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs. 2023 21st International Workshop on Junction Technology (IWJT). (2023) 10.23919/iwjt59028.2023.10175173
- Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi. Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam. Gallium Nitride Materials and Devices XVIII. (2023) 10.1117/12.2646233
口頭発表
- UZUHASHI, Jun, Yuanzhao Yao, Takashi Sekiguchi, OHKUBO, Tadakatsu. Establishment of thickness-controlled TEM lamella preparation method with minimized FIB-induced damage using FIB-SEM. The 21st International Microscopy Congress 2026 (IMC21). 2026
- Zentaro Akase, Taisei Bessho, Yuki Hino, Akito Mie, Kazunori Iwamitsu, Yugant Gotmare, Yoshito Otake, UZUHASHI, Jun, Hiroshi Nakajima, Jun Yamasaki, OHKUBO, Tadakatsu, Shigetaka Tomiya. Development of a Bimodal Analysis Method Integrating 3D Atom Probe Tomography and HAADF-STEM Tomography Using Non-Rigid Registration for Trace Element Distribution Analysis in Semiconductors. The 21st International Microscopy Congress 2026 (IMC21). 2026
- CHEN, Jun, UZUHASHI, Jun, 菅沼奈央, 田中亮, 高島信也, OHKUBO, Tadakatsu, 関口隆史. Secondary electron imaging of GaN pn structure formed by Mg ion implantation. 日本顕微鏡学会第82回学術講演会. 2026
その他の文献
- Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski. Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam. 2025 22nd International Workshop on Junction Technology (IWJT). 2025 22nd International Workshop on Junction Technology (IWJT) (2025) 79-82 10.23919/iwjt66253.2025.11072893 Open Access
- 佐々木 宏和, 大場 洋次郎, 廣井 孝介, 大沼 正人, 埋橋 淳, 大久保 忠勝. SAXS・SANS及びAPTによるSi量の異なるCu-Ni-Si合金中の析出相の解析. 銅と銅合金. 64 [1] (2025) 59-64 10.34562/jic.64.1_59 Open Access
受賞履歴
- 文部科学大臣表彰 令和5年度創意工夫功労者賞 (2023)
- 日本金属学会 第72回金属組織写真賞 奨励賞 (2022)
この機能は所内限定です。
この機能は所内限定です。