研究内容
- Keywords
３次元アトムプローブ (APT)、電子顕微鏡法 (SEM & (S/)TEM)、集束イオンビーム (FIB)
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Jun Uzuhashi, Tadakatsu Ohkubo. Systematic study of FIB-induced damage for the high-quality TEM sample preparation. Ultramicroscopy. 262 (2024) 113980 10.1016/j.ultramic.2024.113980 Open Access
- Jun Uzuhashi, Yuanzhao Yao, Tadakatsu Ohkubo, Takashi Sekiguchi. Experimental investigation and simulation of SEM image intensity behaviors for developing thickness-controlled S/TEM lamella preparation via FIB-SEM. Microscopy. 74 [4] (2025) 279-285 10.1093/jmicro/dfaf006 Open Access
- Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing. Journal of Applied Physics. 131 [18] (2022) 185701 10.1063/5.0087248 Open Access
会議録
- Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski. Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam. 2025 22nd International Workshop on Junction Technology (IWJT). (2025) 79-82 10.23919/iwjt66253.2025.11072893
- Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, Masaharu Edo. Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs. 2023 21st International Workshop on Junction Technology (IWJT). (2023) 10.23919/iwjt59028.2023.10175173
- Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi. Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam. Gallium Nitride Materials and Devices XVIII. (2023) 10.1117/12.2646233
口頭発表
- 佐々木 宏和, 大場 洋次郎, 廣井 孝介, 大沼 正人, 埋橋 淳, 大久保 忠勝. 中性子・X 線小角散乱及び3 次元アトムプローブによるCu-Ni-Si 合金中析出相の解析. 第82回日本顕微鏡学会学術講演会. 2026
- CHEN, Jun, UZUHASHI, Jun, 菅沼奈央, 田中亮, 高島信也, OHKUBO, Tadakatsu, 関口隆史. Secondary electron imaging of GaN pn structure formed by Mg ion implantation. 日本顕微鏡学会第82回学術講演会. 2026
- 埋橋 淳, 武田なお, 網野岳文, 杉山昌章. FIB加工による導入ダメージ評価法の確立に向けて. 第82回日本顕微鏡学会学術講演会. 2026 招待講演
その他の文献
- Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski. Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam. 2025 22nd International Workshop on Junction Technology (IWJT). 2025 22nd International Workshop on Junction Technology (IWJT) (2025) 79-82 10.23919/iwjt66253.2025.11072893 Open Access
- 佐々木 宏和, 大場 洋次郎, 廣井 孝介, 大沼 正人, 埋橋 淳, 大久保 忠勝. SAXS・SANS及びAPTによるSi量の異なるCu–Ni–Si合金中の析出相の解析. 銅と銅合金. 64 [1] (2025) 59-64 10.34562/jic.64.1_59 Open Access
受賞履歴
- 文部科学大臣表彰 令和5年度創意工夫功労者賞 (2023)
- 日本金属学会 第72回金属組織写真賞 奨励賞 (2022)
この機能は所内限定です。
この機能は所内限定です。