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埋橋 淳

埋橋 淳 (UZUHASHI, Jun) 0000-0003-2023-8158

Address
305-0047 茨城県つくば市千現1-2-1 [アクセス]
  • 論文・発表

[研究論文] |[書籍] |[会議録] |[口頭発表] |[特許]

研究論文 TSV

2020
  1. Wei Yi, Ashutosh Kumar, Jun Uzuhashi, Takashi Kimura, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Yongzhao Yao, Yukari Ishikawa, Jun Chen, Tadakatsu Ohkubo, Takashi Sekiguchi, Kazuhiro Hono. Mg diffusion and activation along threading dislocations in GaN. Applied Physics Letters. 116 [24] (2020) 242103 10.1063/5.0009596
2019
  1. Ippei Suzuki, Jun Uzuhashi, Tadakatsu Ohkubo, Shinji Isogami. Strain relaxation in epitaxial γ′-Fe4N ultrathin films. Materials Research Express. 6 [10] (2019) 106446 10.1088/2053-1591/ab41b9
  2. Ashutosh Kumar, Jun Uzuhashi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kazuhiro Hono. Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates. Journal of Applied Physics. 126 [23] (2019) 235704 10.1063/1.5132345
  3. Hiroyasu Nakayama, Takamasa Hirai, Jun Uzuhashi, Ryo Iguchi, Tadakatsu Ohkubo, Tomohiro Koyama, Daichi Chiba, Ken-ichi Uchida. Electric-field-induced on–off switching of anomalous Ettingshausen effect in ultrathin Co films. Applied Physics Express. 12 [12] (2019) 123003 10.7567/1882-0786/ab55bb
  4. S. Sugimoto, J. Uzuhashi, S. Isogami, T. Ohkubo, Y. K. Takahashi, S. Kasai, K. Hono. Impact of oxygen interdiffusion on spin-to-charge conversion at nonmagnetic metal/Bi oxide interfaces. Physical Review Materials. 3 [10] (2019) 10.1103/physrevmaterials.3.104410
  5. Wei Yi, Jun Uzuhashi, Jun Chen, Takashi Kimura, Satoshi Kamiyama, Tetsuya Takeuchi, Tadakatsu Ohkubo, Takashi Sekiguchi, Kazuhiro Hono. Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires. Applied Physics Express. 12 [8] (2019) 085003 10.7567/1882-0786/ab2e37
  6. Shinji Isogami, Jun Uzuhashi, Tadakatsu Ohkubo, Masamitsu Hayashi. Crystalline-structure-dependent magnetoresistance in ferromagnetic metal/conducting amorphous oxide heterostructures. Physical Review Materials. 3 [2] (2019) 10.1103/physrevmaterials.3.024408
2018
  1. Ken C Pradel, Jun Uzuhashi, Toshiaki Takei, Tadakatsu Ohkubo, Kazuhiro Hono, Naoki Fukata. Investigation of nanoscale voids in Sb-doped p-type ZnO nanowires. Nanotechnology. 29 [33] (2018) 335204 10.1088/1361-6528/aac8c8

書籍 TSV

会議録 TSV

口頭発表 TSV

2019
  1. KUMAR, Ashutosh, UZUHASHI, Jun, OHKUBO, Tadakatsu, Ryo Tanaka, Shinya Takashima, HONO, Kazuhiro, Masaharu Edo. Atomic-scale analysis of implanted Mg in GaN using correlative atom probe tomography and scanning transmission electron microscopy. International Workshop on the Physics of Semiconductor Devices. 2019
  2. YI, Wei, CHEN, Jun, KUMAR, Ashutosh, UZUHASHI, Jun, KIMURA, Takashi, OHKUBO, Tadakatsu, SEKIGUCHI, Takashi, HONO, Kazuhiro, Shinya TAKASHIMA, Masaharu EDO. Cathodoluminescence and Atom Probe Study of Mg Implanted GaN Homoepitaxial Layer: An Evidence of Mg Pipe Diffusion along Dislocations . DRIP XVIII. 2019
  3. YI, Wei, UZUHASHI, Jun, CHEN, Jun, KIMURA, Takashi, OHKUBO, Tadakatsu, SEKIGUCHI, Takashi, HONO, Kazuhiro, 上山智, 竹内哲也. Cathodoluminescence and Scanning Transmission Electron Microscopy study of InGaN/GaN Quantum Wells in Core-shell GaN Nanowires. DRIP XVIII. 2019
  4. KUMAR, Ashutosh, UZUHASHI, Jun, OHKUBO, Tadakatsu, Ryo Tanaka, Shinya Takashima, Masaharu Edo, HONO, Kazuhiro. APT and STEM based defects analysis in Mg-implanted GaN layers with varying Mg concentrations. 30th International Conference on Defects in Semiconductors. 2019
2018
  1. CHEN, Jun, YI, Wei, CHO, Yujin, KIMURA, Takashi, SEKIGUCHI, Takashi, UZUHASHI, Jun, HONO, Kazuhiro, OHKUBO, Tadakatsu, Shinya Takashima, Masaharu Edo. Atom Probe and Cathodoluminescence study of Mg implanted layers in GaN. The International Workshop on Nitride Semiconductors 2018 (IWN 2018). 2018
  2. KUMAR, Ashutosh, UZUHASHI, Jun, TANAKA Ryo, TAKASHIMA Shinya, OHKUBO, Tadakatsu, HONO, Kazuhiro, EDO Masaharu. An atom probe tomographic investigation of Mg distribution in Mg-implanted GaN layers on free standing GaN substrates. International Workshop on Nitride Semiconductors (IWN 2018). 2018
  3. YI, Wei, CHEN, Jun, KIMURA, Takashi, UZUHASHI, Jun, Tetsuya Takeuchi, Satoshi Kamiyama, OHKUBO, Tadakatsu, HONO, Kazuhiro, SEKIGUCHI, Takashi. Cathodoluminescence Characterization of Core-shell GaN Nanowires. The International Workshop on Nitride Semiconductors 2018 (IWN 2018). 2018
  4. 磯上 慎二, 埋橋 淳, 大久保 忠勝, 林 将光. 酸化物／強磁性金属ヘテロ接合膜における磁気抵抗効果と強磁性金属結晶配向性との相関. 第42回応用物理学会春季学術講演会. 2018
  5. UZUHASHI, Jun, PRADEL, Charles Ken, OHKUBO, Tadakatsu, FUKATA, Naoki, HONO, Kazuhiro. Atomprobe Analysis of Nanoscale Voids in p-type ZnO Nanowires. Atom Probe Tomography and Microscopy (APT&M) 2018. 2018
  6. PRADEL, Charles Ken, UZUHASHI, Jun, TAKEI, Toshiaki, OHKUBO, Tadakatsu, HONO, Kazuhiro, FUKATA, Naoki. Investigation of Nanoscale Voids in Sb-doped p-type ZnO nanowires. Nanowire Week 2018. 2018
2017
  1. SEKIGUCHI, Takashi, KIMURA, Takashi, LUO, Xianjia, CHO, Yujin, MITSUISHI, Kazutaka, OHKUBO, Tadakatsu, UZUHASHI, Jun, HONO, Kazuhiro, Masaharu Edo, Shinya Takashima. Atom Probe and Cathodoluminescence study of Mg implanted layers in GaN. DRIP XVII (Defects-Recognition, Imaging and Physics in Semicondu. 2017

特許 TSV

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