- Address
- 305-0047 茨城県つくば市千現1-2-1 [アクセス]
- 論文・発表
[研究論文] |[書籍] |[会議録] |[口頭発表] |[特許]
研究論文 TSV
2019
- Wei Yi, Jun Uzuhashi, Jun Chen, Takashi Kimura, Satoshi Kamiyama, Tetsuya Takeuchi, Tadakatsu Ohkubo, Takashi Sekiguchi, Kazuhiro Hono. Cathodoluminescence and scanning transmission electron microscopy study of InGaN/GaN quantum wells in core-shell GaN nanowires. Applied Physics Express. 12 [8] (2019) 085003 10.7567/1882-0786/ab2e37
- Shinji Isogami, Jun Uzuhashi, Tadakatsu Ohkubo, Masamitsu Hayashi. Crystalline-structure-dependent magnetoresistance in ferromagnetic metal/conducting amorphous oxide heterostructures. Physical Review Materials. 3 [2] (2019) 10.1103/physrevmaterials.3.024408
2018
- Ken C Pradel, Jun Uzuhashi, Toshiaki Takei, Tadakatsu Ohkubo, Kazuhiro Hono, Naoki Fukata. Investigation of nanoscale voids in Sb-doped p-type ZnO nanowires. Nanotechnology. 29 [33] (2018) 335204 10.1088/1361-6528/aac8c8
書籍 TSV
会議録 TSV
口頭発表 TSV
2019
- イ ウェイ, 陳 君, クマール アシュトッシュ, 埋橋 淳, 木村 隆, 関口 隆史, 大久保 忠勝, 宝野 和博, Shinya TAKASHIMA, Masaharu EDO. Cathodoluminescence and Atom Probe Study of Mg Implanted GaN Homoepitaxial Layer: An Evidence of Mg Pipe Diffusion along Dislocations . DRIP XVIII. 2019
- KUMAR Ashutosh, UZUHASHI Jun, OHKUBO Tadakatsu, Ryo Tanaka, Shinya Takashima, Masaharu Edo, HONO Kazuhiro. APT and STEM based defects analysis in Mg-implanted GaN layers with varying Mg concentrations. 30th International Conference on Defects in Semiconductors. 2019
2018
- 陳 君, イ ウェイ, ジョ ユージン, 木村 隆, 関口 隆史, 埋橋 淳, 宝野 和博, 大久保 忠勝, Shinya Takashima, Masaharu Edo. Atom Probe and Cathodoluminescence study of Mg implanted layers in GaN. The International Workshop on Nitride Semiconductors 2018 (IWN 2018). 2018
- KUMAR Ashutosh, UZUHASHI Jun, TANAKA Ryo, TAKASHIMA Shinya, OHKUBO Tadakatsu, HONO Kazuhiro, EDO Masaharu. An atom probe tomographic investigation of Mg distribution in Mg-implanted GaN layers on free standing GaN substrates. International Workshop on Nitride Semiconductors (IWN 2018). 2018
- イ ウェイ, 陳 君, 木村 隆, 埋橋 淳, Tetsuya Takeuchi, Satoshi Kamiyama, 大久保 忠勝, 宝野 和博, 関口 隆史. Cathodoluminescence Characterization of Core-shell GaN Nanowires. The International Workshop on Nitride Semiconductors 2018 (IWN 2018). 2018
- 磯上 慎二, 埋橋 淳, 大久保 忠勝, 林 将光. 酸化物／強磁性金属ヘテロ接合膜における磁気抵抗効果と強磁性金属結晶配向性との相関. 第42回応用物理学会春季学術講演会. 2018
- PRADEL, Charles Ken, UZUHASHI, Jun, TAKEI, Toshiaki, OHKUBO, Tadakatsu, HONO, Kazuhiro, FUKATA, Naoki. Investigation of Nanoscale Voids in Sb-doped p-type ZnO nanowires. Nanowire Week 2018. 2018
- UZUHASHI, Jun, PRADEL, Charles Ken, OHKUBO, Tadakatsu, FUKATA, Naoki, HONO, Kazuhiro. Atomprobe Analysis of Nanoscale Voids in p-type ZnO Nanowires. Atom Probe Tomography and Microscopy (APT&M) 2018. 2018
2017
- SEKIGUCHI, Takashi, KIMURA, Takashi, LUO, Xianjia, CHO, Yujin, MITSUISHI, Kazutaka, OHKUBO, Tadakatsu, UZUHASHI, Jun, HONO, Kazuhiro, Masaharu Edo, Shinya Takashima. Atom Probe and Cathodoluminescence study of Mg implanted layers in GaN. DRIP XVII (Defects-Recognition, Imaging and Physics in Semicondu. 2017