Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
| 著者 | Akira Uedono, Hideki Sakurai, UZUHASHI, Jun, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, OHKUBO, Tadakatsu, Nobuyuki Ikarashi, HONO, Kazuhiro, Tetsu Kachi. |
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| 会議名 | Conference on Gallium Nitride Materials and Devices XVIII, part of SPIE OPTO. |
| 発表年 | 2023 |
| 言語 | English |