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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

著者Akira Uedono, Hideki Sakurai, UZUHASHI, Jun, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, OHKUBO, Tadakatsu, Nobuyuki Ikarashi, HONO, Kazuhiro, Tetsu Kachi.
会議名Conference on Gallium Nitride Materials and Devices XVIII, part of SPIE OPTO.
発表年2023
言語English

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