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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, UZUHASHI, Jun, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, OHKUBO, Tadakatsu, Nobuyuki Ikarashi, HONO, Kazuhiro, Tetsu Kachi.
Conference on Gallium Nitride Materials and Devices XVIII, part of SPIE OPTO.. 2023. 招待講演

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    作成時刻 :2023-02-07 03:37:10 +0900 更新時刻 :2024-01-09 03:08:30 +0900

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