Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi.

Gallium Nitride Materials and Devices XVIII . 2023.

https://doi.org/10.1117/12.2646233

Open Access Materials Data Repository (MDR)

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MDRavailable Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

作成時刻: 2023-09-21 03:20:41 +0900更新時刻: 2025-01-16 08:33:46 +0900

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