Observation of Atomic-Scale Structural Changes in Al<sub>2</sub>O<sub>3</sub>/GaN Interfacial Layers Prepared with a Dummy-SiO<sub>2</sub> Process | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Observation of Atomic-Scale Structural Changes in Al₂O₃/GaN Interfacial Layers Prepared with a Dummy-SiO₂ Process

Jun Uzuhashi, Yoshihiro Irokawa, Toshihide Nabatame, Tadakatsu Ohkubo, Yasuo Koide.

ECS Journal of Solid State Science and Technology 14 [8] 085001. 2025.

https://doi.org/10.1149/2162-8777/adf3e3

Open Access The Electrochemical Society (Publisher) Materials Data Repository (MDR)

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MDRavailable Observation of Atomic-Scale Structural Changes in Al<sub>2</sub>O<sub>3</sub>/GaN Interfacial Layers Prepared with a Dummy-SiO<sub>2</sub> Process

作成時刻: 2025-08-07 03:08:18 +0900 更新時刻: 2026-08-20 04:30:20 +0900

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