HOME > Article > DetailObservation of Atomic-Scale Structural Changes in Al2O3/GaN Interfacial Layers Prepared with a Dummy-SiO2 ProcessUZUHASHI, Jun, IROKAWA, Yoshihiro, NABATAME, Toshihide, OHKUBO, Tadakatsu, KOIDE, Yasuo. ECS Journal of Solid State Science and Technology 14 [8] 085001. 2025.https://doi.org/10.1149/2162-8777/adf3e3 Open Access The Electrochemical Society (Publisher) Materials Data Repository (MDR) NIMS author(s)UZUHASHI, JunIROKAWA, YoshihiroNABATAME, ToshihideOHKUBO, TadakatsuFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Observation of Atomic-Scale Structural Changes in Al<sub>2</sub>O<sub>3</sub>/GaN Interfacial Layers Prepared with a Dummy-SiO<sub>2</sub> Process Created at: 2025-08-07 03:08:18 +0900 Updated at: 2026-09-21 04:30:11 +0900