My research focuses on the development of advanced spintronic materials, heterostructures, and devices for next-generation memory and information technologies. Particular interests include Heusler alloys, topological materials, altermagnets, magnetic tunnel junctions (MTJs), spin transport phenomena, spin-current generation, spin-orbit torques (SOTs), and voltage-controlled magnetic anisotropy (VCMA). By combining advanced thin-film growth techniques, interface engineering, and device fabrication, I aim to understand and control spin-dependent phenomena at the nanoscale and to realize energy-efficient, high-performance spintronic devices for future computing, storage, and sensing applications.

Through advanced thin-film growth and interface engineering of Heusler alloys, topological materials, and novel magnetic materials, we develop novel spintronic heterostructures for next-generation memory and logic technologies. We realize magnetic tunnel junctions exhibiting high tunnel magnetoresistance and strong perpendicular magnetic anisotropy, enabling efficient device readout. In parallel, we enhance voltage-controlled magnetic anisotropy, spin-current generation, and spin-orbit torque driven magnetization switching to achieve low-power write operations. Together, these advances pave the way for more energy-efficient and high-performance spintronic devices.