Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography

Akira Uedono; Claudia Fleischmann; Jean-Philippe Soulié; Mustafa Ayyad; Jeroen E. Scheerder; Christoph Adelmann; Jun Uzuhashi; Tadakatsu Ohkubo; Koji Michishio; Nagayasu Oshima; Shoji Ishibashi; Akira Uedono; Claudia Fleischmann; Jean-Philippe Soulié; Mustafa Ayyad; Jeroen E. Scheerder; Christoph Adelmann; Jun Uzuhashi; Tadakatsu Ohkubo; Koji Michishio; Nagayasu Oshima; Shoji Ishibashi

doi:10.1021/acsaelm.4c00877

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Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography

Akira Uedono, Claudia Fleischmann, Jean-Philippe Soulié, Mustafa Ayyad, Jeroen E. Scheerder, Christoph Adelmann, Jun Uzuhashi, Tadakatsu Ohkubo, Koji Michishio, Nagayasu Oshima, Shoji Ishibashi.

ACS Applied Electronic Materials 5894-5902. 2024.

https://doi.org/10.1021/acsaelm.4c00877

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MDRavailable Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography

作成時刻: 2024-08-31 03:13:36 +0900 更新時刻: 2026-09-25 04:31:13 +0900