| 47件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Sungwon Lee, Xinbiao Wang, Hoseong Shin, Nasir Ali, Tien Dat Ngo, Euyheon Hwang, Gil-Ho Kim, Geun Young Yeom, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo. Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS2 Field Effect Transistors. ACS Applied Electronic Materials. 6 [6] (2024) 4149-4158 10.1021/acsaelm.4c00250 | |
| Zhengxin Li, Yangyang Chen, Jian Yuan, Wanting Xu, Xiaoqing Yang, Haotian Wang, Chuanbing Cai, Takashi Taniguchi, Kenji Watanabe, Yanfeng Guo, Zhiyong Liu, Wei Ren. Ferroelectric Switching Behavior in Two-Dimensional Semiconductor α-In2Se3 for Nonvolatile Memory. ACS Applied Electronic Materials. 6 [4] (2024) 2507-2513 10.1021/acsaelm.4c00136 | |
| Takanori Mimura, Yuma Takahashi, Takahisa Shiraishi, Masanori Kodera, Reijiro Shimura, Keisuke Ishihama, Kazuki Okamoto, Hiroki Moriwake, Ayako Taguchi, Takao Shimizu, Yasuhiro Fujii, Akitoshi Koreeda, Hiroshi Funakubo. Phase Identification of 850 nm Thick 7%YO1.5–93%HfO2 Films by Surface and Cross-Sectional Raman Spectroscopies. ACS Applied Electronic Materials. 6 [4] (2024) 2500-2506 10.1021/acsaelm.4c00134 Open Access | |
| Yoshiki Maekawa, Koji Hirai, Kazuki Okamoto, Takao Shimizu, Hiroshi Funakubo. Strain Control of (001)-Polar-Axis-Oriented Epitaxial Y-Doped HfO2 Thin Films. ACS Applied Electronic Materials. (2024) 5525-5535 10.1021/acsaelm.4c00368 Open Access | |
| Mari Hiramatsu, Zhongxu Hu, Sakura Yoshikawa, Zan Yang, Xinyi He, Takayoshi Katase, Jun-ichi Yamaura, Hajime Sagayama, Terumasa Tadano, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Nonequilibrium Layered PbS Stabilized by Sn Doping: Bipolar Semiconductors with Low Thermal Conductivity. ACS Applied Electronic Materials. 6 [11] (2024) 8339-8350 10.1021/acsaelm.4c01572 | |
| Ibrahima Gueye, Shigenori Ueda, Atsushi Ogura, Takahiro Nagata. Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy. ACS Applied Electronic Materials. 6 [5] (2024) 3237-3248 10.1021/acsaelm.4c00049 | |
| Rahmat Hadi Saputro, Tatsuro Maeda, Kaoru Toko, Ryo Matsumura, Naoki Fukata. High Doping Activation (≥1020 cm–3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing. ACS Applied Electronic Materials. 6 [6] (2024) 4297-4303 10.1021/acsaelm.4c00399 | |
| Akira Uedono, Claudia Fleischmann, Jean-Philippe Soulié, Mustafa Ayyad, Jeroen E. Scheerder, Christoph Adelmann, Jun Uzuhashi, Tadakatsu Ohkubo, Koji Michishio, Nagayasu Oshima, Shoji Ishibashi. Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography. ACS Applied Electronic Materials. (2024) 5894-5902 10.1021/acsaelm.4c00877 | |
| Talluri Manoj, Zhenchao Wen, Jun Uzuhashi, Tadakatsu Ohkubo, Hiroaki Sukegawa, Chandrasekhar Murapaka, Brian York, Xiaoyong Liu, Quang Le, Seiji Mitani. Spin–Orbit Torque Modulated by Interface Chemistry in Topological BiSb/NiFe Bilayers with Titanium Insertion. ACS Applied Electronic Materials. 6 [6] (2024) 4269-4276 10.1021/acsaelm.4c00357 | |
| Takuma Hirama, Masato Takei, Hiroyuki Motoyama, Masafumi Ohta, Hiroshi Suga, Takatsugu Wakahara, Kazuhito Tsukagoshi. Resistance Switch in a Minimal-Fullerene Chain in Vertically Stacked Electrodes. ACS Applied Electronic Materials. 6 [5] (2024) 3403-3408 10.1021/acsaelm.4c00219 Open Access | |
