| 50件の論文が見つかりました。論文は出版年月日順に表示しています。（ヘルプ） | |
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| Rajesh Deb, Samapika Mallik, Yamineekanta Mishra, Roshan Padhan, Satyaprakash Sahoo, Kazuya Terabe, Tohru Tsuruoka, Saumya R. Mohapatra. Bias Sweep-Induced Analog Memristor Behavior, Using a Cuprous Iodide Thin Film, for Neuromorphic Computing. ACS Applied Electronic Materials. 7 [10] (2025) 4616-4627 10.1021/acsaelm.5c00529 Open Access | |
| Andrea Ruiz-Perona, Thien Duc Ngo, David Hernández-Pinilla, Wataru Hayami, Tadaaki Nagao. Optimizing the Optical Response of Uniaxial Cerium Hexaboride Films for High-Temperature Plasmonic Applications. ACS Applied Electronic Materials. 7 [5] (2025) 2093-2101 10.1021/acsaelm.5c00022 | |
| He-Yu Chen, Jheng-Jie Lin, Sheng-Shong Wong, Zhen-You Lin, Yu-Chiang Hsieh, Kuo-En Chang, Chung-Lin Wu, Kenji Watanabe, Takashi Taniguchi, Tse-Ming Chen, Luke W. Smith. Locally Doped Transferred Contacts for WSe2 Transistors. ACS Applied Electronic Materials. 6 [11] (2024) 8319-8327 10.1021/acsaelm.4c01574 Open Access | |
| Sungwon Lee, Xinbiao Wang, Hoseong Shin, Nasir Ali, Tien Dat Ngo, Euyheon Hwang, Gil-Ho Kim, Geun Young Yeom, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo. Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS2 Field Effect Transistors. ACS Applied Electronic Materials. 6 [6] (2024) 4149-4158 10.1021/acsaelm.4c00250 | |
| Zhengxin Li, Yangyang Chen, Jian Yuan, Wanting Xu, Xiaoqing Yang, Haotian Wang, Chuanbing Cai, Takashi Taniguchi, Kenji Watanabe, Yanfeng Guo, Zhiyong Liu, Wei Ren. Ferroelectric Switching Behavior in Two-Dimensional Semiconductor α-In2Se3 for Nonvolatile Memory. ACS Applied Electronic Materials. 6 [4] (2024) 2507-2513 10.1021/acsaelm.4c00136 | |
| Takanori Mimura, Yuma Takahashi, Takahisa Shiraishi, Masanori Kodera, Reijiro Shimura, Keisuke Ishihama, Kazuki Okamoto, Hiroki Moriwake, Ayako Taguchi, Takao Shimizu, Yasuhiro Fujii, Akitoshi Koreeda, Hiroshi Funakubo. Phase Identification of 850 nm Thick 7%YO1.5–93%HfO2 Films by Surface and Cross-Sectional Raman Spectroscopies. ACS Applied Electronic Materials. 6 [4] (2024) 2500-2506 10.1021/acsaelm.4c00134 Open Access | |
| Yoshiki Maekawa, Koji Hirai, Kazuki Okamoto, Takao Shimizu, Hiroshi Funakubo. Strain Control of (001)-Polar-Axis-Oriented Epitaxial Y-Doped HfO2 Thin Films. ACS Applied Electronic Materials. (2024) 5525-5535 10.1021/acsaelm.4c00368 Open Access | |
| Mari Hiramatsu, Zhongxu Hu, Sakura Yoshikawa, Zan Yang, Xinyi He, Takayoshi Katase, Jun-ichi Yamaura, Hajime Sagayama, Terumasa Tadano, Shigenori Ueda, Hidenori Hiramatsu, Hideo Hosono, Toshio Kamiya. Nonequilibrium Layered PbS Stabilized by Sn Doping: Bipolar Semiconductors with Low Thermal Conductivity. ACS Applied Electronic Materials. 6 [11] (2024) 8339-8350 10.1021/acsaelm.4c01572 | |
| Ibrahima Gueye, Shigenori Ueda, Atsushi Ogura, Takahiro Nagata. Direct Analysis of Stacked Au/Ti/In2O3/Al2O3/p+-Si Transport Mechanisms Using Operando Hard X-ray Photoelectron Spectroscopy. ACS Applied Electronic Materials. 6 [5] (2024) 3237-3248 10.1021/acsaelm.4c00049 Open Access | |
| Rahmat Hadi Saputro, Tatsuro Maeda, Kaoru Toko, Ryo Matsumura, Naoki Fukata. High Doping Activation (≥1020 cm–3) in Tensile-Strained n-Ge Alloys Achieved by High-Speed Continuous-Wave Laser Annealing. ACS Applied Electronic Materials. 6 [6] (2024) 4297-4303 10.1021/acsaelm.4c00399 Open Access | |
