P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3
(P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3)

著者	Yi-Hsun Chen, Kaijian Xing, Song Liu, Luke N. Holtzman, Daniel L. Creedon, Jeffrey C. McCallum, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, James Hone, Alexander R. Hamilton, Shao-Yu Chen, Michael S. Fuhrer.
掲載誌名	ACS Applied Electronic Materials 4 [11] 5379-5386 ISSN: 26376113
出版社	American Chemical Society (ACS)
発表年	2022
言語	English
DOI	https://doi.org/10.1021/acsaelm.2c01053
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P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3(P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3)