P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3

Yi-Hsun Chen; Kaijian Xing; Song Liu; Luke N. Holtzman; Daniel L. Creedon; Jeffrey C. McCallum; Kenji Watanabe; Takashi Taniguchi; Katayun Barmak; James Hone; Alexander R. Hamilton; Shao-Yu Chen; Michael S. Fuhrer

doi:10.1021/acsaelm.2c01053

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P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3
(P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3)

Yi-Hsun Chen, Kaijian Xing, Song Liu, Luke N. Holtzman, Daniel L. Creedon, Jeffrey C. McCallum, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, James Hone, Alexander R. Hamilton, Shao-Yu Chen, Michael S. Fuhrer.

ACS Applied Electronic Materials 4 [11] 5379-5386. 2022.

https://doi.org/10.1021/acsaelm.2c01053

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2023-01-05 12:13:35 +0900更新時刻: 2024-03-31 17:11:59 +0900

P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3(P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

P-Type Ohmic Contact to Monolayer WSe2 Field-Effect Transistors Using High-Electron Affinity Amorphous MoO3
(P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3)