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X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001)

ACS Applied Electronic Materials 5 [7] 3843-3850. 2023.

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    作成時刻: 2023-07-29 03:25:38 +0900更新時刻: 2024-04-02 07:16:26 +0900

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