HOME > 論文 > 書誌詳細Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealingAshutosh Kumar, Martin Berg, Qin Wang, Jun Uzuhashi, Tadakatsu Ohkubo, Michael Salter, Peter Ramvall. Journal of Applied Physics 134 [3] 035701. 2023.https://doi.org/10.1063/5.0139114 Open Access Materials Data Repository (MDR) NIMS著者埋橋 淳大久保 忠勝Materials Data Repository (MDR)上の本文・データセットMDRavailable Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing 作成時刻: 2023-07-26 03:26:31 +0900更新時刻: 2025-01-16 08:30:35 +0900
