HOME > 論文 > 書誌詳細Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron AnnihilationAkira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohkubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi. physica status solidi (b) 259 [10] 2200183. 2022.https://doi.org/10.1002/pssb.202200183 NIMS著者埋橋 淳大久保 忠勝宝野 和博Materials Data Repository (MDR)上の本文・データセット作成時刻: 2022-10-21 03:26:11 +0900更新時刻: 2024-09-12 07:19:40 +0900