Effect of Ultra‐High‐Pressure Annealing on Defect Reactions in Ion‐Implanted GaN Studied by Positron Annihilation

著者	Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohkubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi.
掲載誌名	physica status solidi (b) 259 [10] 2200183 ISSN: 03701972 ESIでのカテゴリ: PHYSICS
出版社	Wiley
発表年	2022
言語	English
DOI	https://doi.org/10.1002/pssb.202200183
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