HOME > 会議録 > 書誌詳細Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETsRyo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, Masaharu Edo. 2023 21st International Workshop on Junction Technology (IWJT) . 2023.https://doi.org/10.23919/iwjt59028.2023.10175173 Open Access Materials Data Repository (MDR) NIMS著者埋橋 淳大久保 忠勝Materials Data Repository (MDR)上の本文・データセットMDRavailable Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs 作成時刻: 2023-10-21 03:13:26 +0900更新時刻: 2025-03-19 07:10:25 +0900
