HOME > Proceedings > DetailDevelopment of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETsRyo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, Masaharu Edo. 2023 21st International Workshop on Junction Technology (IWJT) . 2023.https://doi.org/10.23919/iwjt59028.2023.10175173 Open Access Materials Data Repository (MDR) NIMS author(s)UZUHASHI, JunOHKUBO, TadakatsuFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs Created at: 2023-10-21 03:13:26 +0900Updated at: 2024-08-10 10:23:32 +0900