HOME > 論文 > 書誌詳細Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron AnnihilationAkira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski. physica status solidi (b) 261 [5] 202400060. 2024.https://doi.org/10.1002/pssb.202400060 NIMS著者埋橋 淳大久保 忠勝Materials Data Repository (MDR)上の本文・データセット作成時刻: 2024-05-08 03:13:01 +0900更新時刻: 2024-09-12 09:24:18 +0900
