Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation

Akira Uedono; Ryo Tanaka; Shinya Takashima; Katsunori Ueno; Masaharu Edo; Kohei Shima; Shigefusa F. Chichibu; Jun Uzuhashi; Tadakatsu Ohkubo; Shoji Ishibashi; Kacper Sierakowski; Michal Bockowski; Akira Uedono; Ryo Tanaka; Shinya Takashima; Katsunori Ueno; Masaharu Edo; Kohei Shima; Shigefusa F. Chichibu; Jun Uzuhashi; Tadakatsu Ohkubo; Shoji Ishibashi; Kacper Sierakowski; Michal Bockowski

doi:10.1002/pssb.202400060

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Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation

Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski.

physica status solidi (b) 261 [5] 202400060. 2024.

https://doi.org/10.1002/pssb.202400060

Open Access Wiley (Publisher) Materials Data Repository (MDR)

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作成時刻: 2024-05-08 03:13:01 +0900 更新時刻: 2026-06-04 08:28:16 +0900