Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers

Rombang Rizky Sihombing, Thomas Scheike, Jun Uzuhashi, Tadakatsu Ohkubo, Zhenchao Wen, Seiji Mitani, Hiroaki Sukegawa.

Applied Physics Letters 126 [2] 022407. 2025.

https://doi.org/10.1063/5.0247660

Open Access AIP Publishing (Publisher) Materials Data Repository (MDR)

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MDRavailable Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers

作成時刻: 2025-02-23 03:10:38 +0900 更新時刻: 2025-11-02 04:30:44 +0900

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