Akira Uedono; Hideki Sakurai; Jun Uzuhashi; Tetsuo Narita; Kacper Sierakowski; Shoji Ishibashi; Shigefusa F. Chichibu; Michal Bockowski; Jun Suda; Tadakatsu Ohokubo; Nobuyuki Ikarashi; Kazuhiro Hono; Tetsu Kachi

doi:10.1117/12.2646233

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Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi.

Proceedings of SPIE - The International Society for Optical Engineering 124210C. 2023.

https://doi.org/10.1117/12.2646233

Open Access SPIE (Publisher) Materials Data Repository (MDR)

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MDRavailable Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

作成時刻: 2023-09-21 03:20:41 +0900更新時刻: 2024-04-02 07:19:50 +0900