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著者名KUMAR, Ashutosh, UZUHASHI, Jun, OHKUBO, Tadakatsu, Ryo Tanaka, Shinya Takashima, Masaharu Edo, HONO, Kazuhiro.
タイトルAPT and STEM based defects analysis in Mg-implanted GaN layers with varying Mg concentrations
会議名30th International Conference on Defects in Semiconductors
発表年2019
言語English
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