HOME > Article > DetailEffect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layerJun Uzuhashi, Jun Chen, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Tadakatsu Ohkubo, Takashi Sekiguchi. Journal of Applied Physics 136 [5] 055702. 2024.https://doi.org/10.1063/5.0216601 Open Access AIP Publishing (Publisher) Materials Data Repository (MDR) NIMS author(s)UZUHASHI, JunCHEN, JunOHKUBO, TadakatsuFulltext and dataset(s) on Materials Data Repository (MDR)MDRavailable Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer Created at: 2024-08-03 03:13:15 +0900 Updated at: 2026-10-30 10:00:55 +0900
