HOME > 論文 > 書誌詳細Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layerJun Uzuhashi, Jun Chen, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Tadakatsu Ohkubo, Takashi Sekiguchi. Journal of Applied Physics 136 [5] 055702. 2024.https://doi.org/10.1063/5.0216601 Open Access Materials Data Repository (MDR) NIMS著者埋橋 淳陳 君大久保 忠勝Materials Data Repository (MDR)上の本文・データセットMDRavailable Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer 作成時刻: 2024-08-03 03:13:15 +0900更新時刻: 2025-01-09 10:22:45 +0900
