Realization of p-type high concentration GaN layer by sequential Mg and N ion-implantation

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Ryo Tanaka, Shinya Takashima, UZUHASHI, Jun, CHEN, Jun, OHKUBO, Tadakatsu, Takashi Sekiguchi, Masaharu Edo.

12th International Workshop on Nitride Semiconductors (IWN2024). 2024年11月03日-2024年11月08日.

作成時刻: 2024-11-27 17:36:51 +0900更新時刻: 2024-11-27 17:36:51 +0900