HOME > 論文 > 書誌詳細Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron BeamA. Uedono, R. Tanaka, S. Takashima, K. Ueno, M. Edo, K. Shima, S. F. Chichibu, J. Uzuhashi, T. Ohkubo, S. Ishibashi, K. Sierakowski, M. Bockowski. IEEE Journal of the Electron Devices Society 13 1252-1257. 2025.https://doi.org/10.1109/jeds.2025.3603203 Open Access Institute of Electrical and Electronics Engineers (IEEE) (Publisher) Materials Data Repository (MDR) NIMS著者埋橋 淳大久保 忠勝Materials Data Repository (MDR)上の本文・データセットMDRavailable Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam 作成時刻: 2026-01-07 03:06:07 +0900 更新時刻: 2026-10-16 04:32:56 +0900
