HOME > Profile > UZUHASHI, Jun
- Unit Leader, Atom Probe Tomography Unit, Materials Fabrication and Analysis Platform, Advanced Engineering and Services Division
- Materials Characterization Group, Digital Transformation Initiative Center for Magnetic Materials, Research Center for Magnetic and Spintronic Materials
- Electron Microscopy Unit, Materials Fabrication and Analysis Platform, Advanced Engineering and Services Division
- Address
- 305-0047 1-2-1 Sengen Tsukuba Ibaraki JAPAN [Access]
Research
- Keywords
Atom Probe Tomography (APT), Electron Microscopy (SEM & (S)TEM), Focused Ion Beam (FIB)
PublicationsNIMS affiliated publications since 2004.
Research papers
- Jun Uzuhashi, Tadakatsu Ohkubo. Systematic study of FIB-induced damage for the high-quality TEM sample preparation. Ultramicroscopy. 262 (2024) 113980 10.1016/j.ultramic.2024.113980 Open Access
- Jun Uzuhashi, Yuanzhao Yao, Tadakatsu Ohkubo, Takashi Sekiguchi. Experimental investigation and simulation of SEM image intensity behaviors for developing thickness-controlled S/TEM lamella preparation via FIB-SEM. Microscopy. 74 [4] (2025) 279-285 10.1093/jmicro/dfaf006 Open Access
- Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing. Journal of Applied Physics. 131 [18] (2022) 185701 10.1063/5.0087248 Open Access
Proceedings
- Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski. Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam. 2025 22nd International Workshop on Junction Technology (IWJT). (2025) 79-82 10.23919/iwjt66253.2025.11072893
- Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, Masaharu Edo. Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs. 2023 21st International Workshop on Junction Technology (IWJT). (2023) 10.23919/iwjt59028.2023.10175173
- Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi. Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam. Gallium Nitride Materials and Devices XVIII. (2023) 10.1117/12.2646233
Presentations
- Emi Kano, NARA, Jun, Keisuke Atsumi, Shuhong Li, Tomonori Nishimura, Kaito Kanahashi, UZUHASHI, Jun, Kosuke Nagashio, SAKUMA, Yoshiki, Nobuyuki Ikarashi. Atomic resolution analysis of highly oriented MoS2/sapphire interface. 2026 International Conference on Solid State Devices and Materials. 2026
- Tatsuya Yamamoto, Tomohiro Ichinose, UZUHASHI, Jun, Sumito Tsunegi, Takayuki Nozaki, OHKUBO, Tadakatsu, Shingo Tamaru, Kay Yakushiji, Hitoshi Kubota, Shinji Yuasa. Memristive magnetic tunnel junctions using a spinodal magnet. 2026年 第87回応用物理学会秋季学術講演会. 2026
- Simon Moore, 高橋 麻里, 宮田 全展, 石原 崚伍, 埋橋 淳, 太田 道広, 竹内 恒博, 大久保 忠勝, 東嶺 孝一, 前之園 信也. 高エントロピーペロブスカイト型酸化物ナノ粒子の構造と物性. 2026年 第87回応用物理学会秋季学術講演会. 2026
Misc
- Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski. Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam. 2025 22nd International Workshop on Junction Technology (IWJT). 2025 22nd International Workshop on Junction Technology (IWJT) (2025) 79-82 10.23919/iwjt66253.2025.11072893 Open Access
- 佐々木 宏和, 大場 洋次郎, 廣井 孝介, 大沼 正人, 埋橋 淳, 大久保 忠勝. SAXS・SANS及びAPTによるSi量の異なるCu-Ni-Si合金中の析出相の解析. 銅と銅合金. 64 [1] (2025) 59-64 10.34562/jic.64.1_59 Open Access
Published patent applications
- ナノ結晶軟磁性合金 (2022)
- 窒化物半導体装置及び窒化物半導体装置の製造方法 (2025)
- 電子源及びその製造方法、並びに電子源を備える装置 (2023)
Awards
- 文部科学大臣表彰 令和5年度創意工夫功労者賞 (2023)
- 日本金属学会 第72回金属組織写真賞 奨励賞 (2022)
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この機能は所内限定です。