研究内容
- Keywords
３次元アトムプローブ、電子顕微鏡法、集束イオンビーム
出版物2004年以降のNIMS所属における研究成果や出版物を表示しています。
論文
- Jun Uzuhashi, Tadakatsu Ohkubo. Systematic study of FIB-induced damage for the high-quality TEM sample preparation. Ultramicroscopy. 262 (2024) 113980 10.1016/j.ultramic.2024.113980
- Jun Uzuhashi, Yuanzhao Yao, Tadakatsu Ohkubo, Takashi Sekiguchi. Experimental investigation and simulation of SEM image intensity behaviors for developing thickness-controlled S/TEM lamella preparation via FIB-SEM. Microscopy. 74 [4] (2025) 279-285 10.1093/jmicro/dfaf006
- Jun Uzuhashi, Jun Chen, Ashutosh Kumar, Wei Yi, Tadakatsu Ohkubo, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Kacper Sierakowski, Michal Bockowski, Hideki Sakurai, Tetsu Kachi, Takashi Sekiguchi, Kazuhiro Hono. Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing. Journal of Applied Physics. 131 [18] (2022) 185701 10.1063/5.0087248 Open Access
会議録
- Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski. Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam. 2025 22nd International Workshop on Junction Technology (IWJT). (2025) 79-82 10.23919/iwjt66253.2025.11072893
- Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masahiro Horita, Jun Suda, Jun Uzuhashi, Tadakatsu Ohkubo, Masaharu Edo. Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs. 2023 21st International Workshop on Junction Technology (IWJT). (2023) 10.23919/iwjt59028.2023.10175173
- Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa F. Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi. Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam. Gallium Nitride Materials and Devices XVIII. (2023) 10.1117/12.2646233
口頭発表
- 赤瀬 善太郎, 別所 泰成, 岩満 一功, 大竹 義人, UZUHASHI, Jun, 中島 宏, 山﨑 順, OHKUBO, Tadakatsu, 冨谷 茂隆. Robust Shape Matching for Integration of Multimodal 3D Microscopy Data. Joint Conference HQSN2025 & HQMST2025. 2025
- Simon Moore, Mari Takahashi, UZUHASHI, Jun, OHKUBO, Tadakatsu, Koichi Higashimine, Shinya Maenosono. Sustainable Thermoelectric Materials using Multi-alloyed Perovskite Nanoparticles as Building Blocks. 第22回日本熱電学会学術講演会（TSJ2025）. 2025
- WEN, ZhenChao, HE, Cong, UZUHASHI, Jun, OHKUBO, Tadakatsu, 能崎 幸雄, MITANI, Seiji, SUKEGAWA, Hiroaki. Epitaxial Li-Ti-O thin films with conductivity gradient for spin-orbit torques. 第49回日本磁気学会学術講演会. 2025
その他の文献
- Akira Uedono, Ryo Tanaka, Shinya Takashima, Katsunori Ueno, Masaharu Edo, Kohei Shima, Shigefusa F. Chichibu, Jun Uzuhashi, Tadakatsu Ohkubo, Shoji Ishibashi, Kacper Sierakowski, Michal Bockowski. Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam. 2025 22nd International Workshop on Junction Technology (IWJT). 2025 22nd International Workshop on Junction Technology (IWJT) (2025) 79-82 10.23919/iwjt66253.2025.11072893
- 佐々木 宏和, 大場 洋次郎, 廣井 孝介, 大沼 正人, 埋橋 淳, 大久保 忠勝. SAXS・SANS及びAPTによるSi量の異なるCu–Ni–Si合金中の析出相の解析. 銅と銅合金. 64 [1] (2025) 59-64 10.34562/jic.64.1_59
公開特許出願
受賞履歴
- 文部科学大臣表彰 令和5年度創意工夫功労者賞 (2023)
- 日本金属学会 第72回金属組織写真賞 奨励賞 (2022)
この機能は所内限定です。
この機能は所内限定です。