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EBIC法によるHfSiON MOSFETのリーク箇所の観察
(Observation of leakage sites in a HfSiON gate dielectric of a MOSFET device by electron-beam-induced current)
日本応用物理学会. August 29, 2006-September 01, 2006.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:04:16 +0900 Updated at: 2017-07-10 19:40:19 +0900