Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Electron-beam-induced current study of hydrogen passivation on grain boundaries in multicrystalline silicon: Influence of GB character and impurity contamination

Jun Chen, Deren Yang, Zhenqiang Xi, Takashi Sekiguchi.

Physica B: Condensed Matter 364 [1-4] 162-169. 2005.

https://doi.org/10.1016/j.physb.2005.04.008

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作成時刻: 2016-05-24 14:46:23 +0900更新時刻: 2024-04-01 17:58:05 +0900

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