HOME > 論文 > 書誌詳細Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode Bin Chen, Jun Chen, Takashi Sekiguchi, Takasumi Ohyanagi, Hirofumi Matsuhata, Akimasa Kinoshita, Hajime Okumura, Filippo Fabbri. Applied Physics Letters 93 [3] 033514. 2008.https://doi.org/10.1063/1.2960339 NIMS著者陳 君Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 15:35:41 +0900更新時刻: 2024-04-01 18:33:26 +0900
