HOME > 論文 > 書誌詳細Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier DiodesJun Chen, Wei Yi, Ashutosh Kumar, Akio Iwanade, Ryo Tanaka, Shinya Takashima, Masaharu Edo, Shun Ito, Takashi Kimura, Tadakatsu Ohkubo, Takashi Sekiguchi. Journal of Electronic Materials 49 [9] 5196-5204. 2020.https://doi.org/10.1007/s11664-020-08081-2 NIMS著者陳 君大久保 忠勝Materials Data Repository (MDR)上の本文・データセット作成時刻: 2020-08-18 03:00:20 +0900 更新時刻: 2026-10-07 04:18:19 +0900
